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BIPOLAR TRANSISTOR. IRGBC40U Datasheet

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BIPOLAR TRANSISTOR. IRGBC40U Datasheet






IRGBC40U TRANSISTOR. Datasheet pdf. Equivalent




IRGBC40U TRANSISTOR. Datasheet pdf. Equivalent





Part

IRGBC40U

Description

INSULATED GATE BIPOLAR TRANSISTOR



Feature


www.DataSheet4U.com Previous Datasheet Index Next Data Sheet PD - 9.683A I RGBC40U INSULATED GATE BIPOLAR TRANSIST OR Features • Switching-loss rating i ncludes all "tail" losses • Optimized for high operating frequency (over 5kH z) See Fig. 1 for Current vs. Frequency curve G E C UltraFast IGBT VCES = 60 0V VCE(sat) ≤ 3.0V @VGE = 15V, I C = 20A n-channel Descripti.
Manufacture

International Rectifier

Datasheet
Download IRGBC40U Datasheet


International Rectifier IRGBC40U

IRGBC40U; on Insulated Gate Bipolar Transistors (I GBTs) from International Rectifier have higher usable current densities than c omparable bipolar transistors, while at the same time having simpler gate-driv e requirements of the familiar power MO SFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-220AB Absolute Maxim um Ratings Paramet.


International Rectifier IRGBC40U

er VCES IC @ T C = 25°C IC @ T C = 100 C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Em itter Voltage Continuous Collector Curr ent Continuous Collector Current Pulsed Collector Current Clamped Inductive Lo ad Current Gate-to-Emitter Voltage Reve rse Voltage Avalanche Energy Maximum Po wer Dissipation Maximum Power Dissipati on Operating Junction .


International Rectifier IRGBC40U

and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torqu e, 6-32 or M3 screw. Max. 600 40 20 16 0 160 ±20 15 160 65 -55 to +150 300 (0 .063 in. (1.6mm) from case) 10 lbf•in (1.1N•m) Units V A V mJ W °C Th ermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambi ent, typical socket mount W.

Part

IRGBC40U

Description

INSULATED GATE BIPOLAR TRANSISTOR



Feature


www.DataSheet4U.com Previous Datasheet Index Next Data Sheet PD - 9.683A I RGBC40U INSULATED GATE BIPOLAR TRANSIST OR Features • Switching-loss rating i ncludes all "tail" losses • Optimized for high operating frequency (over 5kH z) See Fig. 1 for Current vs. Frequency curve G E C UltraFast IGBT VCES = 60 0V VCE(sat) ≤ 3.0V @VGE = 15V, I C = 20A n-channel Descripti.
Manufacture

International Rectifier

Datasheet
Download IRGBC40U Datasheet




 IRGBC40U
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INSULATED GATE BIPOLAR TRANSISTOR
PD - 9.683A
IRGBC40U
UltraFast IGBT
Features
• Switching-loss rating includes all "tail" losses
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
C
G
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
VCES = 600V
VCE(sat) 3.0V
@VGE = 15V, IC = 20A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
TO-220AB
Max.
600
40
20
160
160
±20
15
160
65
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
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C-663
Min.
Typ.
0.50
2.0 (0.07)
Max.
0.77
80
Units
°C/W
g (oz)
Revision 0
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IRGBC40U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
V(BR)CES/TJ
VCE(on)
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Temp. Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
VGE(th)
VGE(th)/TJ
gfe
ICES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
IGES Gate-to-Emitter Leakage Current
Min.
600
20
3.0
11
Typ. Max. Units
—— V
—— V
0.63 — V/°C
2.2 3.0
2.7 — V
2.3 —
— 5.5
-13 — mV/°C
18 — S
— 250 µA
— 1000
— ±100 nA
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 1.0mA
IC = 20A
VGE = 15V
IC = 40A
See Fig. 2, 5
IC = 20A, T J = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, I C = 20A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, T J = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
— 51 67
IC = 20A
— 8.9 11
— 20 33
nC VCC = 400V
VGE = 15V
See Fig. 8
— 25 —
TJ = 25°C
— 21 — ns IC = 20A, VCC = 480V
— 96 190
VGE = 15V, R G = 10
— 43 120
Energy losses include "tail"
— 0.34 —
— 0.41 — mJ See Fig. 9, 10, 11, 14
— 0.75 1.6
— 25 —
— 23 —
— 174 —
— 140 —
TJ = 150°C,
ns IC = 20A, VCC = 480V
VGE = 15V, R G = 10
Energy losses include "tail"
— 1.4 — mJ See Fig. 10, 14
— 7.5 — nH Measured 5mm from package
— 1500 —
— 190 —
VGE = 0V
pF VCC = 30V
See Fig. 7
— 17 —
ƒ = 1.0MHz
Notes:
Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 10, ( See fig. 13a )
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Repetitive rating; pulse width limited
by maximum junction temperature.
Pulse width 80µs; duty factor 0.1%.
Pulse width 5.0µs,
single shot.
C-664
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IRGBC40U
50
40
30 Square wave:
60% of rated
vo lta ge
20
For both:
D u ty cycle: 5 0%
TJ = 125°C
Tsink = 90°C
G a te d rive a s spe cified
P ow er D issip ation = 28 W
T riangular wave:
C lam p voltage:
8 0 % o f ra te d
10 Ideal diodes
0
0.1 1 10
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=I RMS of fundamental; for triangular wave, I=I PK)
100
1000
100 TJ = 25 °C
TJ = 150°C
10
VGE = 15V
20µs PULSE WIDTH
1
1 10
VC E , C ollector-to-E mitter V oltage (V )
Fig. 2 - Typical Output Characteristics
1000
100
TJ = 1 50 °C
TJ = 2 5°C
10
1
0.1
5
VCC = 100V
5µs PULSE W IDTH
10 15 20
VG E , G ate -to-E m itter V olta ge (V )
Fig. 3 - Typical Transfer Characteristics
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C-665
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