DatasheetsPDF.com

N-CHANNEL MOSFET. STBW9NK90Z Datasheet

DatasheetsPDF.com

N-CHANNEL MOSFET. STBW9NK90Z Datasheet






STBW9NK90Z MOSFET. Datasheet pdf. Equivalent




STBW9NK90Z MOSFET. Datasheet pdf. Equivalent





Part

STBW9NK90Z

Description

N-CHANNEL MOSFET



Feature


www.DataSheet4U.com STB9NK90Z - STF9NK9 0Z STP9NK90Z - STW9NK90Z N-CHANNEL 900V - 1.1Ω - 8A - TO-220/FP-D²PAK-TO-24 7 Zener-Protected SuperMESH™ MOSFET G eneral features Type STB9NK90Z STW9NK90 Z STP9NK90Z STF9NK90Z s s s Package RD S(on) <1.3 Ω <1.3 Ω <1.3 Ω <1.3 ID 8 8 8 8 A A A A Pw 160 W 160 W 16 0 W 40 W 3 3 1 2 VDSS 900 900 900 900 V V V V 1 TO-220 D²PAK EXTR.
Manufacture

ST Microelectronics

Datasheet
Download STBW9NK90Z Datasheet


ST Microelectronics STBW9NK90Z

STBW9NK90Z; EMELY HIGH dv/dt CAPABILITY 100% AVALANC HE TESTED 1 3 2 3 GATE CHARGE MINIMIZ ED TO-247 TO-220FP 1 2 Description The SuperMESH™ series is obtained th rough an extreme optimization of ST’s well established strip-based PowerMESH ™ layout. In addition to pushing on-r esistance significantly down, special c are is taken to ensure a very good dv/d t capability for the mos.


ST Microelectronics STBW9NK90Z

t demanding applications. Internal sche matic diagram Applications s s s HIGH CURRENT, HIGH SPEED SWITCHING SWITCH M ODE POWER SUPPLIES DC-AC CONVERTERS FOR WELDING, UPS AND MOTOR DRIVE Order co des Sales Type STB9NK90Z STF9NK90Z STP9 NK90Z STW9NK90Z Marking B9NK90Z F9NK90Z P9NK90Z W9NK90Z Package D²PAK TO-220F P TO-220 TO-247 Packaging TAPE & REEL T UBE TUBE TUBE Sept.


ST Microelectronics STBW9NK90Z

ember 2005 www.DataSheet4U.com Rev 2 1/ 15 www.st.com 15 www.DataSheet4U.com 1 Electrical ratings STB9NK90Z - STF9N K90Z - STP9NK90Z - STW9NK90Z 1 Table 1 . Electrical ratings Absolute maximum ratings Parameter Value TO-220/D²PAK/ TO-247 VDS VDGR VGS ID ID Drain-Source Voltage (VGS = 0) Drain-gate Voltage (R GS = 20kΩ) Gate-Source Voltage Drain Current (continuous) .

Part

STBW9NK90Z

Description

N-CHANNEL MOSFET



Feature


www.DataSheet4U.com STB9NK90Z - STF9NK9 0Z STP9NK90Z - STW9NK90Z N-CHANNEL 900V - 1.1Ω - 8A - TO-220/FP-D²PAK-TO-24 7 Zener-Protected SuperMESH™ MOSFET G eneral features Type STB9NK90Z STW9NK90 Z STP9NK90Z STF9NK90Z s s s Package RD S(on) <1.3 Ω <1.3 Ω <1.3 Ω <1.3 ID 8 8 8 8 A A A A Pw 160 W 160 W 16 0 W 40 W 3 3 1 2 VDSS 900 900 900 900 V V V V 1 TO-220 D²PAK EXTR.
Manufacture

ST Microelectronics

Datasheet
Download STBW9NK90Z Datasheet




 STBW9NK90Z
www.DataSheet4U.com
STB9NK90Z - STF9NK90Z
STP9NK90Z - STW9NK90Z
N-CHANNEL 900V - 1.1- 8A - TO-220/FP-D²PAK-TO-247
Zener-Protected SuperMESH™ MOSFET
General features
Type
VDSS RDS(on)
ID
Pw
STB9NK90Z
STW9NK90Z
STP9NK90Z
STF9NK90Z
900 V
900 V
900 V
900 V
<1.3
<1.3
<1.3
<1.3
8 A 160 W
8 A 160 W
8 A 160 W
8 A 40 W
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Applications
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES
s DC-AC CONVERTERS FOR WELDING, UPS
AND MOTOR DRIVE
Order codes
Package
3
2
1
TO-220
3
1
D²PAK
3
2
1
TO-247
3
2
1
TO-220FP
Internal schematic diagram
Sales Type
STB9NK90Z
STF9NK90Z
STP9NK90Z
STW9NK90Z
Marking
B9NK90Z
F9NK90Z
P9NK90Z
W9NK90Z
Package
D²PAK
TO-220FP
TO-220
TO-247
Packaging
TAPE & REEL
TUBE
TUBE
TUBE
wwSewpt.eDmabetra2S00h5eet4U.com
Rev 2
1/15
www.st.com
15




 STBW9NK90Z
www.DataSheet4U.com
1 Electrical ratings
STB9NK90Z - STF9NK90Z - STP9NK90Z - STW9NK90Z
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Drain-Source Voltage (VGS = 0)
VDGR Drain-gate Voltage (RGS = 20k)
VGS Gate-Source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM Note 2 Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5kΩ)
dv/dt Note 3 Peak Diode Recovery voltage slope
VISO
Insulation Withstand Volatge (DC)
Tj Operating Junction Temperature
Tstg Storage Temperature
Value
TO-220/D²PAK/
TO-247
TO-220FP
8
5
32
160
1.28
--
900
900
± 30
4
4.5
8 (Note 1)
5 (Note 1)
32 (Note 1)
40
0.32
2500
-55 to 150
Unit
V
V
V
A
A
A
W
W/°C
KV
V/ns
V
°C
Table 2. Thermal data
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-amb Max
Maximum Lead Temperature For Soldering
Purpose
TO-220/
D²PAK
TO-220FP
0.78 3.1
62.5
300
TO-247
0.78
50
Unit
°C/W
°C/W
°C
Table 3. Avalanche characteristics
Symbol
Parameter
IAR
Avalanche Current, repetitive or
Not-Repetitive (pulse width limited by Tj max)
Single Pulse Avalanche Energy
EAS (starting Tj=25°C, ID=IAR, VDD= 50V)
Max Value
8
300
Unit
A
mJ
ww2/1w5.DataSheet4U.com




 STBW9NK90Z
www.DataSheet4U.com
STB9NK90Z - STF9NK90Z - STP9NK90Z - STW9NK90Z
2 Electrical characteristics
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
V(BR)DSS
Drain-Source Breakdown
Voltage
IDSS
Zero Gate Voltage Drain
Current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate Body Leakage Current
(VDS = 0)
Gate Threshold Voltage
Static Drain-Source On
Resistance
Test Conditions
ID = 1 mA, VGS= 0
VDS = Max Rating,
VDS = Max Rating,Tc=125°C
VGS = ±20 V, VDS = 0
VDS= VGS, ID = 100 µA
VGS= 10 V, ID= 3.6 A
Min.
900
3
Typ.
3.75
1.1
Max.
1
50
±10
4.5
1.3
Unit
V
µA
µA
V
Table 5. Dynamic
Symbol
Parameter
Test Conditions
gfs Note 4
Ciss
Coss
Crss
Coss eq.
Note 5
Qg
Qgs
Qgd
Forward Transconductance VDS =15V, ID = 3.6 A
Input Capacitance
Output Capacitance
VDS =25V, f=1 MHz, VGS=0
Reverse Transfer Capacitance
Equivalent Ouput Capacitance VGS=0, VDS =0V to 720V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=720V, ID = 8A
VGS =10V
(see Figure 19)
Min.
Typ.
5.75
2115
190
40
Max.
Unit
S
pF
pF
pF
115 pF
72 100 nC
14 nC
38 nC
Table 6. Switching times
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
td(off)
tf
tr(Voff)
tf
tc
Turn-off Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD=450 V, ID=4A,
RG=4.7Ω, VGS=10V
(see Figure 20)
VDD=450 V, ID=4A,
RG=4.7Ω, VGS=10V
(see Figure 20)
VDD=720 V, ID=8A,
RG=4.7Ω, VGS=10V
(see Figure 20)
Min. Typ. Max. Unit
22 ns
13 ns
55 ns
28 ns
53 ns
11 ns
22 ns
www.DataSheet4U.com
3/15






Recommended third-party STBW9NK90Z Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)