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Power MOSFET. STK0765F Datasheet

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Power MOSFET. STK0765F Datasheet
















STK0765F MOSFET. Datasheet pdf. Equivalent













Part

STK0765F

Description

Power MOSFET



Feature


www.DataSheet4U.com Semiconductor STK0 765F Power MOSFET Features • Low Crs s • Low gate charge. • Low leakage current Ordering Information Type NO. STK0765F Marking STK0765 Package Code TO-220F-3L Outline Dimensions unit : mm PIN Connections 1. Gate 2. Drain 3 . Source www.DataSheet4U.com KST-H038- 003 1 www.DataSheet4U.com STK0765F Ab solute maximum ratings C.
Manufacture

AUK

Datasheet
Download STK0765F Datasheet


AUK STK0765F

STK0765F; haracteristic Drain-source voltage Gate- source voltage Drain current (DC) * Dra in current (Pulsed) * Drain power dissi pation (Tc=25℃) Single pulsed avalanc he energy Avalanche current (Repetitive ) Repetitive avalanche energy Peak diod e recovery dv/dt Junction temperature S torage temperature range * Limited by m aximum junction temperature Symbol VDS S VGSS ID IDP PD ② ①.


AUK STK0765F

① ③ EAS IAR EAR dv/dt TJ Tstg Rati ng 650 ±30 TC=25℃ TC=100℃ 28 40 42 0 5.2 14.7 5.5 150 -55~150 7 4.4 (TC=2 5℃) Unit V V A A A W mJ A mJ V/ns ℃ ℃ Thermal Resistance Characteristic Thermal resistance junction-case Therm al resistance Junction-ambient Symbol Rth(J-C) Rth(J-A) Typ. - Max 3.125 62 .5 Units ℃/W www.DataSheet4U.com KS T-H038-003 2 www.DataSheet4U.com .


AUK STK0765F

STK0765F Electrical Characteristics Char acteristic Drain-source breakdown volta ge Gate threshold voltage Drain-source cut-off current Gate leakage current St atic drain-source on-resistance ④ For ward transfer conductance Input capacit ance Output capacitance Reverse transfe r capacitance Turn-on delay time Rise t ime Turn-off delay time Fall time Total gate charge Gate-so.





Part

STK0765F

Description

Power MOSFET



Feature


www.DataSheet4U.com Semiconductor STK0 765F Power MOSFET Features • Low Crs s • Low gate charge. • Low leakage current Ordering Information Type NO. STK0765F Marking STK0765 Package Code TO-220F-3L Outline Dimensions unit : mm PIN Connections 1. Gate 2. Drain 3 . Source www.DataSheet4U.com KST-H038- 003 1 www.DataSheet4U.com STK0765F Ab solute maximum ratings C.
Manufacture

AUK

Datasheet
Download STK0765F Datasheet




 STK0765F
www.DataSheet4U.com
Semiconductor
Features
Low Crss
Low gate charge.
Low leakage current
Ordering Information
Type NO.
STK0765F
Outline Dimensions
Marking
STK0765
STK0765F
Power MOSFET
Package Code
TO-220F-3L
unit : mm
www.DataSheet4U.com
KST-H038-003
PIN Connections
1. Gate
2. Drain
3. Source
1




 STK0765F
www.DataSheet4U.com
Absolute maximum ratings
Characteristic
Drain-source voltage
Gate-source voltage
Drain current (DC) *
Drain current (Pulsed) *
Drain power dissipation (Tc=25)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
Peak diode recovery dv/dt
Junction temperature
Storage temperature range
* Limited by maximum junction temperature
Thermal Resistance
Characteristic
Thermal resistance junction-case
Thermal resistance Junction-ambient
STK0765F
Symbol
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
dv/dt
TJ
Tstg
Rating
650
±30
TC=25
TC=100
28
7
4.4
40
420
5.2
14.7
5.5
150
-55~150
(TC=25)
Unit
V
V
A
A
A
W
mJ
A
mJ
V/ns
Symbol
Rth(J-C)
Rth(J-A)
Typ.
-
-
Max
3.125
62.5
Units
/W
www.DataSheet4U.com
KST-H038-003
2




 STK0765F
www.DataSheet4U.com
Electrical Characteristics
Characteristic
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Static drain-source on-resistance
Forward transfer conductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Test Condition
ID=250 , VGS=0
ID=250 , VDS= VGS
VDS=650V, VGS=0
VDS=0V, VGS=±30V
VGS=10V, ID=3.5A
VDS=5V, ID=3.5A
VGS=0V, VDS=25V
f=1
VDD=325V, ID=7A
RG=25
Fig. 13
④⑤
VDS=520V, VGS=10V,
ID=7A
Fig. 12
④⑤
STK0765F
(Tc=25°C)
Min. Typ. Max. Unit
650 - - V
2.0 - 4.0 V
- - 10 µA
- - ±100 nA
- - 1.2
3.9 6.4
-
S
- 881 -
- 123 -
pF
- 19 -
- 18 -
- 19 -
- 72 -
ns
- 28 -
- 49 -
- 8.4 -
nC
- 22.1 -
Source-Drain Diode Ratings and Characteristics
Characteristic
Symbol
Test Condition
(TC=25)
Min Typ Max Units
Source current (DC)
Source current (Pulsed)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
IS Integral reverse diode
ISP in the MOSFET
--
7
A
- - 28
VSD VGS=0V, IS=7A
- - 1.4 V
trr IS=7A
Qrr dIS/dt=100A/
- 320
- 2.4
-
-
ns
uC
Note ;
Repetitive rating : Pulse width limited by maximum junction temperature
L=15.7mH, IAS=7A, VDD=50V, RG=27
IS 7A, di/dt300A/, VDD=100V
Pulse Test : Pulse width400 , Duty cycle2%
Essentially independent of operating temperature
www.DataSheet4U.com
KST-H038-003
3




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