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NTE5607 TRIAC. NTE5605 Datasheet

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NTE5607 TRIAC. NTE5605 Datasheet
















NTE5605 TRIAC. Datasheet pdf. Equivalent













Part

NTE5605

Description

(NTE5600 - NTE5607) TRIAC



Feature


www.DataSheet4U.com NTE5600 thru NTE560 7 TRIAC, 4 Amp Description: The NTE5600 through NTE5607 TRIACs are designed pr imarily for full–wave AC control appl ications such as light dimmers, motor c ontrols, heating controls and power sup plies; or wherever full–wave silicon gate controlled solid–state devices a re needed. TRIAC type thyristors switch from a blocking to a co.
Manufacture

NTE Electronics

Datasheet
Download NTE5605 Datasheet


NTE Electronics NTE5605

NTE5605; nducting state for either polarity of ap plied anode voltage with positive or ne gative gate triggering. Features: D 2 M ode Gate Triggering D Blocking Voltages to 600V D All Diffused and Glass Passi vated Junctions for Greater Parameters Uniformity and Stability Absolute Maxim um Ratings: Repetitive Peak Off–State Voltage (TC = +110°C, Note 1), VDRM N TE5600 . . . . . . . .


NTE Electronics NTE5605

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V NTE5601 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V NTE5602 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


NTE Electronics NTE5605

. . . . . . . . . . . . . . . . . . . . . . . 100V NTE5603 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 V NTE5604 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V NTE5605 . . . . . . . . ..





Part

NTE5605

Description

(NTE5600 - NTE5607) TRIAC



Feature


www.DataSheet4U.com NTE5600 thru NTE560 7 TRIAC, 4 Amp Description: The NTE5600 through NTE5607 TRIACs are designed pr imarily for full–wave AC control appl ications such as light dimmers, motor c ontrols, heating controls and power sup plies; or wherever full–wave silicon gate controlled solid–state devices a re needed. TRIAC type thyristors switch from a blocking to a co.
Manufacture

NTE Electronics

Datasheet
Download NTE5605 Datasheet




 NTE5605
www.DataSheet4U.com
NTE5600 thru NTE5607
TRIAC, 4 Amp
Description:
The NTE5600 through NTE5607 TRIACs are designed primarily for full–wave AC control applications
such as light dimmers, motor controls, heating controls and power supplies; or wherever full–wave
silicon gate controlled solid–state devices are needed. TRIAC type thyristors switch from a blocking
to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering.
Features:
D 2 Mode Gate Triggering
D Blocking Voltages to 600V
D All Diffused and Glass Passivated Junctions for Greater Parameters Uniformity and Stability
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (TC = +110°C, Note 1), VDRM
NTE5600 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
NTE5601 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
NTE5602 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
NTE5603 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5604 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
NTE5605 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5606 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
NTE5607 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On–State Current (TC = +85°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak Surge Current (One Full Cycle, 60Hz, TJ = –40° to +110°C), ITSM . . . . . . . . . . . . . . . . . . . 30A
Circuit Fusing (t = 8.3ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.7A2s
Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Average Gate Power, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W
Peak Gate Voltage, VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +110°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75°C/W
Mounting Torque (6–32 Screw, Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 in. lb.
Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant
current source for blocking capability such that the voltage applied exceeds the rated block-
ing voltage.
Nwowtew.2D. aTtoarSquheeerat4tinUg.caopmplies with the use of a compression washer. Mounting torque in excess of
8 in. lb. does not appreciably lower case–to–sink thermal resistance. MT2 and heatsink con-
tact pad are common.




 NTE5605
www.DataSheet4U.com
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Peak Forward or Reverse
Blocking Current
OnState Voltage (Either Direction)
Peak Gate Trigger Voltage
MT2 (+), G (+); MT2 (), G ()
MT2 (+), G (); MT2 (), G (+)
Peak Gate Trigger Voltage
MT2 (+), G (+); MT2 (), G ()
MT2 (+), G (); MT2 (), G (+)
Holding Current (Either Direction)
TurnOn Time (Either Direction)
Blocking Voltage Application
Rate at Commutation
IDRM, Rated VDRM or VRRM, Gate Open,
IRRM TJ = +25°C
– – 10 µA
Rated VDRM or VRRM, Gate Open,
TJ = +110°C
– – 2 mA
VTM ITM = 6A Peak
––2V
VGT
Main Terminal Voltage = 12V,
RL = 100, TJ = 40°C
1.4 2.5 V
VGT
Main Terminal Voltage = Rated VDRM, 0.2 – – V
RL = 10k, TJ = +110°C
IH Main Terminal Voltage = 12V, Gate Open,
TJ = 40°C, Initiating Current = 1A
70 mA
Main Terminal Voltage = 12V, Gate Open,
TJ = +25°C
30 mA
ton ITM = 14A, IGT = 100mA
1.5 µs
dv/dt Rated VDRM, Gate Open, TJ = +85°C
5 V/µs
Gate Trigger Current
Quads I & III
IGT Main Terminal Voltage = 12V,
RL = 100Ω, TJ = +25°C
Main Terminal Voltage = 12V,
RL = 100Ω, TJ = 40°C
– – 30 mA
– – 60 mA
.450
(11.4)
Max
.330 (8.38)
Max
.175
(4.45)
Max
.655
(16.6)
Max
MT1 MT2 G
.118 (3.0)
Dia
.030 (.762) Dia
www.DataSheet4U.com
.130 (3.3)
Max
.090 (2.28)








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