MJ90

www.DataSheet4U.com COMSET SEMICONDUCTORS MJ900/901/1000/1001 COMPLEMENTARY POWER DARLINGTONS The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their complementary NPN types are the MJ1000 and MJ1001 respectively. TO-3 ABSOLUTE MAXIMUM RATINGS Symbol Ratings MJ900 MJ1000 Value Unit 60 Vdc VCBO Collector-Base Voltage MJ901 MJ1001 MJ900 MJ1000 80 60 Vdc VCEO Collector-EmitterVoltage IB=0 MJ901 MJ1001 MJ900 MJ1000 MJ901 MJ1001 MJ900 MJ1000 MJ901 MJ1001 80 VEBO Emitter-Base Voltage 5.0 Vdc IC Collector Current IC(RMS) 8.0 Adc www.DataSheet4U.com Page 1 of 4 www.DataSheet4U.com COMSET SEMICONDUCTORS MJ900/901/1000/1001 MJ900 MJ1000 MJ901 MJ1001 @ TC < 25° MJ900 MJ1000 MJ901 Derate above MJ1001 25°C IB Base Current 0.1 Adc 90 Watts PT Power Dissipation 0.515 W/°C TJ Junction Temperature MJ900 MJ1000 MJ901 MJ1001 -65 to +200 °C TS Storage Temperature THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case MJ900 MJ1000 MJ901 MJ1001 Value 1.94 Unit °C/W www.DataSheet4U.com Page 2 of 4 w w w . D a t a S h e e t 4 U . c o m COMSET SEMICONDUCTORS MJ900/901/1000/1001 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO Ratings Collector-Emitter Breakdown Voltage ...