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FLL300IL-1 Datasheet, Equivalent, GAAS Fets.

(FLL300IL-1/-2/-3) L-band Medium & High Power GAAS Fets

(FLL300IL-1/-2/-3) L-band Medium & High Power GAAS Fets

 

 

 

Part FLL300IL-1
Description (FLL300IL-1/-2/-3) L-band Medium & High Power GAAS Fets
Feature www.
DataSheet4U.
com FLL300IL-1, FLL300I L-2, FLL300IL-3 L-Band Medium & High Po wer GaAs FET FEATURES



• High Output Power: P1dB = 44.
5dBm (T yp.
) High Gain: G1dB = 12.
0dB (Typ.
)@1.
8GHz (FLL300IL-2) High PAE: ηadd = 44% (Typ.
) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL300 IL-1, FLL300IL-2, FLL300IL-3 are Power GaAs FETs that are specifically designe d to provide high power at L-Band frequ encies with gain, linearity and efficie ncy superior to that of silicon devices .
The performance in multitone environm ents for Class AB operation make them i deally suited for base st .
Manufacture Fujitsu Microelectronics
Datasheet
Download FLL300IL-1 Datasheet
Part FLL300IL-1
Description (FLL300IL-1/-2/-3) L-band Medium & High Power GAAS Fets
Feature www.
DataSheet4U.
com FLL300IL-1, FLL300I L-2, FLL300IL-3 L-Band Medium & High Po wer GaAs FET FEATURES



• High Output Power: P1dB = 44.
5dBm (T yp.
) High Gain: G1dB = 12.
0dB (Typ.
)@1.
8GHz (FLL300IL-2) High PAE: ηadd = 44% (Typ.
) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL300 IL-1, FLL300IL-2, FLL300IL-3 are Power GaAs FETs that are specifically designe d to provide high power at L-Band frequ encies with gain, linearity and efficie ncy superior to that of silicon devices .
The performance in multitone environm ents for Class AB operation make them i deally suited for base st .
Manufacture Fujitsu Microelectronics
Datasheet
Download FLL300IL-1 Datasheet

FLL300IL-1

FLL300IL-1
FLL300IL-1

FLL300IL-1

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