EFFECT TRANSISTOR. 2SJ621 Datasheet

2SJ621 TRANSISTOR. Datasheet pdf. Equivalent

2SJ621 Datasheet
Recommendation 2SJ621 Datasheet
Part 2SJ621
Description MOS FIELD EFFECT TRANSISTOR
Feature 2SJ621; www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ621 P-CHANNEL MOS FIELD EFFECT TRAN.
Manufacture NEC
Datasheet
Download 2SJ621 Datasheet





NEC 2SJ621
www.DataSheet4U.com
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ621
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The 2SJ621 is a switching device which can be driven directly
by a 1.8 V power source.
This device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
1.8 V drive available
Low on-state resistance
RDS(on)1 = 44 mMAX. (VGS = –4.5 V, ID = –2.0 A)
RDS(on)2 = 56 mMAX. (VGS = –3.0 V, ID = –2.0 A)
RDS(on)3 = 62 mMAX. (VGS = –2.5 V, ID = –2.0 A)
RDS(on)4 = 105 mMAX. (VGS = –1.8 V, ID = –1.5 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ621
Marking: XG
SC-96 (Mini Mold Thin Type)
PACKAGE DRAWING (Unit: mm)
0.4
+0.1
–0.05
0.16+–00..016
3
12
0 to 0.1
0.95 0.95
1.9
2.9 ±0.2
0.65
0.9 to 1.1
1 : Gate
2 : Source
3 : Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TA = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TA = 25°C) Note2
PT1
PT2
Channel Temperature
Tch
Storage Temperature
Tstg
–12
m8.0
m3.5
m12
0.2
1.25
150
–55 to +150
V
V
A
A
W
W
°C
°C
Notes 1. PW 10 µs, Duty Cycle 1%
2. Mounted on FR-4 board, t 5 sec.
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
www.DataSheet4U.comThe information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15634EJ1V0DS00 (1st edition)
Date Published May 2002 NS CP(K)
Printed in Japan
©
2001



NEC 2SJ621
www.DataSheet4U.com
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
IDSS
IGSS
VGS(off)
VDS = –12 V, VGS = 0 V
VGS = m8.0 V, VDS = 0 V
VDS = –10 V, ID = –1.0 mA
Forward Transfer Admittance
| yfs | VDS = –10 V, ID = –3.5 A
Drain to Source On-state Resistance
RDS(on)1 VGS = –4.5 V, ID = –2.0 A
RDS(on)2 VGS = –3.0 V, ID = –2.0 A
RDS(on)3 VGS = –2.5 V, ID = –2.0 A
RDS(on)4 VGS = –1.8 V, ID = –1.5 A
Input Capacitance
Ciss VDS = –10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1.0 MHz
Turn-on Delay Time
td(on) VDD = –6.0 V, ID = –2.0 A
Rise Time
tr VGS = –4.0 V
Turn-off Delay Time
td(off)
RG = 10
Fall Time
tf
Total Gate Charge
QG VDD = –10 V
Gate to Source Charge
QGS VGS = –4.0 V
Gate to Drain Charge
QGD ID = –3.5 A
Body Diode Forward Voltage
VF(S-D) IF = 3.5 A, VGS = 0 V
2SJ621
MIN. TYP. MAX. UNIT
–10 µA
m10 µA
0.45 1.5 V
4.0 S
35 44 m
42 56 m
46 62 m
63 105 m
630 pF
170 pF
100 pF
20 ns
70 ns
320 ns
200 ns
6.2 nC
1.0 nC
2.0 nC
0.84 V
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
RG
PG.
VGS ()
0
τ
τ = 1µs
Duty Cycle 1%
RL
VDD
VGS()
VGS
Wave Form
10%
0
90%
VGS
VDS()
90%
VDS
VDS
Wave Form
0
td(on)
10% 10%
tr td(off)
90%
tf
ton toff
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
www.DataSheet4U.com
2
Data Sheet D15634EJ1V0DS



NEC 2SJ621
www.DataSheet4U.com
TYPICAL CHARACTERISTICS (TA = 25°C)
2SJ621
DERATING FACTOR FORWARD BIAS
SAFE OPERATING AREA
120
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
1.5
100 1.25
80 1
60 0.75
40 0.5
20 0.25
0
0 20 40 60 80 100 120 140 160
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
0
0 20 40 60 80 100 120 140 160
TA - Ambient Temperature - °C
100
10
R DS(on) Lim ited
(VGS = 4.5 V)
ID (pulse)
ID (D C )
PW = 1 ms
10 ms
1 1 00 m s
5s
0.1
S ingle P ulse
M ounted on FR-4 board of
50 x 50 x 1.6 m m
0.01
0.1
1
10
VDS - Drain to Source Voltage - V
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
Single Pulse
Without board
100
Mounted on FR-4 board of
50 × 50 × 1.6 mm
10
1
0.1
1m
www.DataSheet4U.com
10 m
100 m
1
10
PW - Pulse Width - s
Data Sheet D15634EJ1V0DS
100
1000
3





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)