2SJ621

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ621 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SJ621 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 2.8 ±0.2 PACKAGE DRAWING (Unit: mm) 0.4 +0.1 –0.05 0.65–0.15 +0.1 0.16+0.1 –0.06 3 FEATURES 1.8 V drive available Low on-state resistance RDS(on)1 = 44 mΩ MAX. (VGS = –4.5 V, ID = –2.0 A) RDS(on)2 = 56 mΩ MAX. (VGS = –3.0 V, ID = –2.0 A) RDS(on)3 = 62 mΩ MAX. (VGS = –2.5 V, ID = –2.0 A) RDS(on)4 = 105 mΩ MAX. (VGS = –1.8 V, ID = –1.5 A) 1.5 0 to 0.1 1 2 0.95 0.95 0.65 0.9 to 1.1 1.9 2.9 ±0.2 1 : Gate 2 : Source 3 : Drain ORDERING INFORMATION PART NUMBER 2SJ621 PACKAGE SC-96 (Mini Mold Thin Type) Marking: XG ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TA = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 Note2 –12 m8.0 m3.5 m12 0.2 1.25 150 –55 to +150 V V A A W W °C °C EQUIVALENT CIRCUIT Drain Total Power Dissipation (TA = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on FR-4 board, t ≤ 5 sec. Remark PT2 Tch Tstg Gate Gate Protection Diode Body Diode Source The diode connected betwe...