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Phototransistors
PNZ150 (PN150)
Silicon planar type
Unit: mm
For optical control systems
φ3.5±0.2...
www.DataSheet4U.com
Photo
transistors
PNZ150 (PN150)
Silicon planar type
Unit: mm
For optical control systems
φ3.5±0.2 4.8±0.3 (2.4) (2.4)
4.5±0.3 Not soldered
4.2±0.3 (2.3) (1.9)
■ Features
High sensitivity Wide spectral sensitivity characteristics, suited for detecting GaAs LEDs Low dark current Side-view plastic mold type package
(2.8) 12.8 min.
(1.8)
(1.0)
2-0.98±0.2 10.0 min. 2-0.45±0.15 0.45±0.15
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-emitter voltage (Base open) Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO IC PC Topr Tstg Rating 20 20 100 −25 to +85 −30 to +100 Unit V mA mW °C °C
(R1.75)
(2.54)
(1.2)
1
2
1: Emitter 2: Collector LSTLR102-003 Package
■ Electrical-Optical Characteristics Ta = 25°C ± 3°C
Parameter Photocurrent Dark current Peak emission wavelength Half-power angle Rise time *2 Fall time
*2 *1
Symbol ICE(L) ICEO λp θ tr tf VCE(sat) VCE = 10 V VCE = 10 V
Conditions VCE = 10 V, L = 500 lx
Min 1.0
Typ 3.0 0.01 800 35 4 4
Max
Unit mA µA nm ° µs µs
1.00
The angle from which photocurrent becomes 50% VCC = 10 V, ICE(L) = 5 mA, RL = 100 Ω ICE(L) = 1 mA, L = 1 000 lx
Collector-emitter saturation voltage *1
0.2
0.5
V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for
transistors. 2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%. 3. This ...