PN155

www.DataSheet4U.com Phototransistors PNZ155 (PN155) Silicon NPN Phototransistor Unit : mm Not soldered 0.8 max. For optical control systems 1.5±0.2 2.1±0.15 1.6±0.15 0.8±0.1 Features High sensitivity Wide spectral sensitivity, suited for detecting GaAs LEDs Low dark current 12.8 min. 3.9±0.25 4.5±0.15 3.5±0.15 Flat type plastic package (2.95) 2-1.2±0.3 2-0.45±0.15 1 2 2.54±0.2 0.45±0.2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Ratings 20 5 10 100 –25 to +85 –30 to +100 Unit V V mA mW ˚C ˚C 1: Emitter 2: Collector Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Response time Collector saturation voltage *1 Symbol ICEO ICE(L) λP θ tr, tf*2 VCE(sat) *1 *1 Conditions VCE = 10V VCE = 10V, L = 100 lx VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 1mA, RL = 100Ω ICE(L) = 1mA, L = 1000 lx min 0.05 typ 0.01 0.2 800 70 4 0.2 max 1 Unit µA mA nm deg. µs 0.5 V Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. *2 Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 1...