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STQ1HNC60 Dataheets PDF



Part Number STQ1HNC60
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-CHANNEL MOSFET
Datasheet STQ1HNC60 DatasheetSTQ1HNC60 Datasheet (PDF)

www.DataSheet4U.com N-CHANNEL 600V - 7Ω - 0.4A TO-92 PowerMesh™II MOSFET TYPE STQ1HNC60 s s s s s STQ1HNC60 PRELIMINARY DATA VDSS 600 V RDS(on) <8Ω ID 0.4 A TYPICAL RDS(on) = 7 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-92 DESCRIPTION Using the latest high voltage MESH OVERLAY™II process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout cou.

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www.DataSheet4U.com N-CHANNEL 600V - 7Ω - 0.4A TO-92 PowerMesh™II MOSFET TYPE STQ1HNC60 s s s s s STQ1HNC60 PRELIMINARY DATA VDSS 600 V RDS(on) <8Ω ID 0.4 A TYPICAL RDS(on) = 7 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-92 DESCRIPTION Using the latest high voltage MESH OVERLAY™II process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s SWITCH MODE LOW POWER SUPPIES (SMPS) s CFL ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 600 600 ± 30 0.4 0.25 1.6 3.5 0.028 3.5 –65 to 150 150 (1)ISD ≤ 0.4 A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ T JMAX. Unit V V V A A A W W/°C V/ns °C °C (•)Pulse width limited by safe operating area www.DataSheet4U.com August 2001 1/6 www.DataSheet4U.com STQ1HNC60 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max (Surface Mounted) Maximum Lead Temperature For Soldering Purpose 35.7 60 300 °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 0.4 100 Unit A mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 30V Min. 600 1 50 ±100 Typ. Max. Unit V µA µA nA ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250 µA VGS = 10V, ID = 0.4 A Min. 2 Typ. 3 7 Max. 4 8 Unit V Ω DYNAMIC Symbol gfs Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID = 0.4 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 1.25 160 26 3.8 Max. Unit S pF pF pF www.DataSheet4U.com 2/6 www.DataSheet4U.com STQ1HNC60 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 300V, ID = 0.7 A RG = 4.7Ω, VGS = 10V (see test circuit, Figure 3) VDD = 480V, ID = 1.4 A, VGS = 10V, RG = 4.7Ω Min. Typ. 8 8 8.5 2.8 2.8 11.5 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 480 V, ID = 1.4 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Min. Typ. 25 9 34 Max. Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 0.4 A, VGS = 0 ISD = 1.4 A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 500 950 3.8 Test Conditions Min. Typ. Max. 0.4 1.6 1.6 Unit A A V ns µC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. www.DataSheet4U.com 3/6 www.DataSheet4U.com STQ1HNC60 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times www.DataSheet4U.com 4/6 www.DataSheet4U.com STQ1HNC60 TO-92 MECHANICAL DATA mm DIM. MIN. TYP. MAX. MIN. inch TYP. MAX. A 4.58 5.33 0.180 0.210 B 4.45 5.2 0.175 0.204 C 3.2 4.2 0.126 0.165 D 12.7 0.500 E 1.27 0.050 F 0.4 0.51 0.016 0.020 G 0.35 0.14 www.DataSheet4U.com 5/6 www.DataSheet4U.com STQ1HNC60 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication s.


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