STQ1NE10L

www.DataSheet4U.com N-CHANNEL 100V - 0.3 Ω - 1A TO-92 STripFET™ POWER MOSFET TYPE STQ1NE10L s s s s s STQ1NE10L VDSS 100 V RDS(on) <0.4 Ω ID 1A TYPICAL RDS(on) = 0.3 Ω EXCEPTIONAL HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED AVALANCHE RUGGED TECHNOLOGY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL (DISK DRIVES, etc.) s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION TO-92 TO-92 (Ammopack) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM() Ptot(1) dv/dt (2) EAS (3) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 100 100 ± 16 1 0.6 4 3 0.025 6 400 -55 to 150 Unit V V V A A A W W/°C V/ns mJ °C °C () Pulse width limited by safe operating area. (1) Related to Rthj -l (2) ISD ≤ 1A, di/dt ≤200A/µs, VDD ≤ V (BR)DSS, Tj ≤ TJMAX (3) Starting T j = 25 oC, ID = 1A, VDD = 50V www.Dat...