BCU83

w w w . D a t a S h e e t 4 U . c o m BCU83 MECHANICAL DATA Dimensions in mm 6 .0 5 .0 NPN EPITAXIAL PLANAR SILICON TRANSISTOR Ideal for high current driver applications requiring efficient low loss devices 8 .5 3 .0 1 4 .0 FEATURES LOW VCE(SAT) HIGH CURRENT HIGH ENERGY RATING 1 .4 5 P IT C H 0 .5 T Y P APPLICATIONS 4 .7 E C B 0 .5 Any High Current Driver Applications Requiring Efficient Low Loss Devices. TO92(EXTENDED) ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC IC(PK) Ptot Tstg Tj Collector – Base voltage Collector – Emitter voltage Emitter – Base voltage Collector current Peak Collector current Total Dissipation at Tcase = 25°C Storage Temperature 60V 20V 6V 5A 8A 0.9W –55 to 150°C 150°C www.DataSheet4U.com Maximum Operating Junction Temperature Magnatec. Telephone +44(0)1455 554711. Fax +44(0)1455 558843. E-mail: magnatec@semelab.co.uk Website: http://www.semelab.co.uk Prelim 6/99 www.DataSheet4U.com BCU83 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter ICBO IEBO VCE(sat)* VBE(sat)* hFE* fT Cob Collector Cut–Off Current Emitter Cut–Off Current Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage DC Current Gain Transition frequency Output Capacitance Test Conditions VCB = 50V VEB = 5V IC = 3A IC = 3A VCE = 2V VCE = 2V VCE = 10V VCB = 10V IE = 0 IC = 0 IB = 60mA IB = 60mA IC = 0.5A IC = 3A IC = 50mA f = 1MHz Min. Typ. Max. 1 1 0.5 Unit. mA mA V V — MHz p...