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BCU83D
MECHANICAL DATA Dimensions in mm
6 .2 5 .0 1 .5 1 .5 1 .0 0 .5 0 .7
NPN EPITAXIAL PLANAR S...
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BCU83D
MECHANICAL DATA Dimensions in mm
6 .2 5 .0 1 .5 1 .5 1 .0 0 .5 0 .7
NPN EPITAXIAL PLANAR SILICON
TRANSISTOR
Ideal For High current Switching Application
5
6
4 .2
5 .9
FEATURES
LOW VCE(SAT)
2 .4
4 3
2
1
0 .4 0 .8 2 .4 0 .8 2 .4
1 .0
0 .4 1 .8
HIGH CURRENT CAPACITY FAST SWITCHING SPEED
1 : 2 : 3 : 4 : 5 : 6 :
B a s e 1 E m itte r E m itte r B a s e 2 C o lle c to C o lle c to 1 2
r 2 r 1
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO VCEO VEBO IC ICP IB PC PT Collector – Base voltage Collector – Emitter voltage (IB = 0) Emitter – Base voltage Collector current Collector Current (Pulse) Collector Dissipation (Mounted on Ceramic Board (750mm2 x 0.8mm) Total Dissipation (Mounted on Ceramic Board (750mm2 x 0.8mm) 60V 20V 6V 5A 8A 1A 1.5W 2W 150°C –55 to 150°C
Prelim.6/99
Tj www.DataSheet4U.com Junction Temperature Tstg Storage Temperature Magnatec.
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BCU83D
DYNAMICS CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
V(BR)CEO V(BR)CBO Collector – Emitter Base Breakdown Voltage Collector – Base Breakdown Voltage V(BR)EBO ICBO IEBO hFE1* hFE2* hFE VCE(sat) VBE(sat) fT Cob ton tstg tf Emitter Base Breakdown Voltage Collector Cut–Off Current Emitter Cut–Off Current DC Current Gain DC Current Gain Collector – Emitter SaturationVoltage Base – Emit...
