Power Transistors
2SC5121
Silicon NPN triple diffusion planar type
For general amplification
8.0+–00..15
Unit: mm
3.2...
Power
Transistors
2SC5121
Silicon
NPN triple diffusion planar type
For general amplification
8.0+–00..15
Unit: mm
3.2±0.2
■ Features
φ 3.16±0.1
3.8±0.3 11.0±0.5
High collector-base voltage (Emitter open) VCBO
3.05±0.1
High collector-emitter voltage (Base open) VCEO
Small collector output capacitance (Common base, input open circuited) Cob
TO-126B package which requires no insulation plate for installation to the heat sink
1.9±0.1 16.0±1.0
/ ■ Absolute Maximum Ratings Ta = 25°C
e ) Parameter
Symbol Rating
Unit
c type Collector-base voltage (Emitter open) VCBO
400
V
n d tage. ued Collector-emitter voltage (Base open) VCEO
400
V
le s ontin Emitter-base voltage (Collector open) VEBO
7
V
a elifecyc disc Collector current
IC
70
mA
n u t ed, Peak collector current
ICP
100
mA
roduc d typ Collector power dissipation
PC
1.2
W
te tin ur P tinue Junction temperature
Tj
150
°C
g fo con Storage temperature
Tstg −55 to +150 °C
0.75±0.1
0.5±0.1
4.6±0.2 2.3±0.2
0.5±0.1
1.76±0.1
123
1: Emitter 2: Collector 3: Base TO-126B-A1 Package
in n s followlianned dis ■ Electrical Characteristics Ta = 25°C ± 3°C
a o lude e, p Parameter
Symbol
Conditions
Min Typ Max Unit
c d inc e typ Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 0
400
V
tinue anc Emitter-base voltage (Collector open) VEBO IE = 1 µA, IC = 0
7
V
M is con inten Collector-base cutoff current (Emitter open) ICBO VCB = 300 V, IE = 0
10
µA
/Dis ma Collector-e...
