SSP4N80A

www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 3.400 Ω (Typ.) 1 2 3 SSP4N80A BVDSS = 800 V RDS(on) = 4.0 Ω ID = 4 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25 C) * Ο Ο Ο Value 800 4 2.5 1 O 2 O 1 O 1 O 3 O Units V A A V mJ A mJ V/ns W W W/ C Ο 16 + _ 30 256 4 12 2.0 120 0.96 Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8“ from case for 5-seconds Ο TJ , TSTG TL - 55 to +150 Ο C 300 Thermal Resistance Symbol R R R θJC θCS θJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -- Max. 1.04 -62.5 Units °C/W Rev. B ©1999 Fairchild Semiconductor Corporation www.DataSheet4U.com www.DataSheet4U.com SSP4N80A Ο N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25 C unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Char...