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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D302
PMEM4020PD PNP transistor/Schottky-diode module
Product specification 2003 Nov 24
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Philips Semiconductors
Product specification
PNP transistor/Schottky-diode module
FEATURES • 600 mW total power dissipation • High current capability • Reduces required PCB area • Reduced pick and place costs • Small plastic SMD package. Transistor • Low collector-emitter saturation voltage. Diode • Ultra high-speed switching • Very low forward voltage • Guard ring protected. APPLICATIONS • DC-to-DC converters • Inductive load drivers • General purpose load drivers • Reverse polarity protection circuits. DESCRIPTION Combination of a PNP transistor with low VCEsat and high current capability and a planar Schottky barrier diode with an integrated guard ring for stress protection in a SOT457 (SC-74) small plastic package. NPN complement: PMEM4020ND. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PMEM4020PD − DESCRIPTION plastic surface mounted package; 6 leads
Marking code: B7.
handbook, halfpage 6
PMEM4020PD
PINNING PIN 1 2 3 4 5 6 emitter not connected cathode anode base collector DESCRIPTION
5
4
4 5 1 3 6
1
2
3
MGU868
Fig.1
Simplified outline (SOT457) and symbol.
VERSION SOT457
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2003 Nov 24 2
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Philips Semiconductors
Product specification
PNP transistor/Schottky-diode module
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PNP transistor VCBO VCEO VEBO IC collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) open emitter open base open collector note 1 note 2 note 3 Ts ≤ 55 °C; note 4 ICM IBM Ptot peak collector current peak base current total power dissipation Tamb ≤ 25 °C; note 1 Tamb ≤ 25 °C; note 2 Tamb ≤ 25 °C; note 3 Ts ≤ 55 °C; note 4 Tj VR IF IFSM Ptot junction temperature Schottky barrier diode continuous reverse voltage continuous forward current non-repetitive peak forward current total power dissipation t = 8.3 ms half sinewave; JEDEC method Tamb ≤ 25 °C; note 1 Tamb ≤ 25 °C; note 2 Tamb ≤ 25 °C; note 3 Ts ≤ 55 °C; note 4 Tj Ptot Tstg Tamb Notes junction temperature note 2 Tamb = 25 °C; note 2 note 2 Combined device total power dissipation storage temperature operating ambient temperature − −65 −65 − − − − − − − − − − − − − − − − − − − − − − PARAMETER CONDITIONS
PMEM4020PD
MIN.
MAX. −40 −40 −5 −0.75 −1 −1.3 −2 −3 −1 295 400 500 1000 150
UNIT
V V V A A A A A A mW mW mW mW °C V A A mW mW mW mW °C mW °C °C
20 1 5 295 400 500 1000 150
600 +150 +150
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint for SOT457. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pads for collector and cathode both 1 cm2. 3. Mounted on a ceramic printed-circuit board; single-sided copper; tinplated; standard footprint. 4. Solder point of c.