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NE3508M04 Dataheets PDF



Part Number NE3508M04
Manufacturers California Eastern Labs
Logo California Eastern Labs
Description HETERO JUNCTION FIELD EFFECT TRANSISITOR
Datasheet NE3508M04 DatasheetNE3508M04 Datasheet (PDF)

www.DataSheet4U.com PRELIMINARY PRODUCT INFORMATION HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3508M04 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES - Super Low Noise Figure & Associated Gain : NF=0.45dB TYP. Ga=14dB TYP. @f=2GHz, VDS=2V, ID=10mA - Flat-lead 4-pin tin-type super mini-mold(M04) package (Pb-Free T. ) APPLICATIONS - Satellite Radio(SDARS, DMB, etc.) antenna LNA - LNA for Micro-wave communication system ORDERING INFORMATION Part Number NE3508M04 NE3508M04-T2 Order Num.

  NE3508M04   NE3508M04


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www.DataSheet4U.com PRELIMINARY PRODUCT INFORMATION HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3508M04 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES - Super Low Noise Figure & Associated Gain : NF=0.45dB TYP. Ga=14dB TYP. @f=2GHz, VDS=2V, ID=10mA - Flat-lead 4-pin tin-type super mini-mold(M04) package (Pb-Free T. ) APPLICATIONS - Satellite Radio(SDARS, DMB, etc.) antenna LNA - LNA for Micro-wave communication system ORDERING INFORMATION Part Number NE3508M04 NE3508M04-T2 Order Number NE3508M04-A NE3508M04-T2-A Quantity 50pcs (Non reel) 3 Kpcs/reel V79 Marking Supplying Form - 8 mm wide emboss taping - Pin1(Source), Pin2(Drain) face the perforation side of the tape Remark To order evaluation samples, please contact your local NEC sales office. Part number for sample order: NE3508M04 ABSOLUTE MAXIMUM RATINGS ( TA =+ 25 °C ) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature SYMBOL VDS VGS ID IG Ptot Tch Tstg Note RATINGS 4.0 -3.0 IDSS 400 175 +150 - 65 to +150 UNIT V V mA µA mW °C °C Note Mounted on 1.08cm2 X 1.0mm(t) glass epoxy PCB Caution : Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Document No. P*****EJ0V0PM00 (10th edition) Date Published October 2005 CP(K) © NEC Compound Semiconductor Devices 2005 www.DataSheet4U.com www.DataSheet4U.com NE3508M04 RECOMMENDED OPERATING CONDITIONS(TA = +25 °C) PARAMETER Drain to Source Voltage Drain Current Input Power SYMBOL VDS ID Pin MIN. ------- TYP. 2 10 --- MAX. 3 30 0 UNIT V mA dB m ELECTRICAL CHARACTERISTICS PARAMETER Gate to Source Leak Current Saturated Drain Current Gate to Source Cutoff Voltage Trans conductance Noise Figure Associated Gain Output Power at 1dB Gain Compression Point TA = +25 °C) TEST CONDITIONS VGS=-3V VDS=2V, VGS=0V VDS=2V, ID=100µA VDS=2V, ID=10mA VDS=2V, ID=10mA f 2GHz VDS=3V, ID=30mA(Non-RF) f 2GHz SYMBOL IGSO IDSS VGS(off) gm NF Ga Po(1dB) MIN. --60 -0.35 100 --12 --- TYP. 1 90 -0.5 --0.45 14 18 MAX. 20 120 -0.65 --0.9 ----- UNIT µA mA V mS dB dB dBm The information in this document is subject to change without notice. PRELIMINARY PRODUCT INFORMATION www.DataSheet4U.com www.DataSheet4U.com NE3508M04 TYPICAL CHARACTERISTICS TA = +25 °C) DRAIN CURRENT vs. GATE to SOURCE VOLTAGE 100 Mounted on Glass Epoxy PCB (1.08 cm2 x 1.0mm(t) ) 90 ID (m A) 80 70 60 50 40 30 20 10 0 VDS=2V Drain Current -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0 Gate to Source Voltage VGS (V) Note) Under examination DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY 2.0 1.8 Minimum Noise Figure NFmin (dB) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 5 10 15 frequency (GHz) NFmin Ga VDS=2V, ID=10mA 20 18 16 12 10 8 6 4 2 0 0 2 Drain Current ID (mA) 8 10 VGS = 0 V - 0.1 V Associated Gain Ga (dB) 14 6 - 0.2 V 4 - 0.3 V - 0.4 V - 0.5 V 0 1 2 3 4 VDS 5 Drain to Source Voltage MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. DREIN CURRENT 2.0 1.8 Minimum Noise Figure NFmin (dB) 1.6 1.4 1.2 1.0 0.8 0.6 0.2 0.0 0 10 20 Drein Current ID (mA) 30 40 Ga f=2GHz, VDS=2V 20 18 16 Associated Gain Ga (mA) 14 12 10 8 NFmin 6 4 2 0 MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. Drein to Source Voltage 2.0 1.8 Minimum Noise Figure NFmin (dB) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 1.0 1.5 2.0 2.5 3.0 3.5 Drain to Source Voltage VDS (V) NFmin Ga f=2GHz, ID=10mA 20 18 16 12 10 8 6 4 2 0 Associated Gain Ga (dB) 14 www.DataSheet4U.com 0.4 www.DataSheet4U.com NE3508M04 REFERENCE DATA MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. DREIN CURRENT 2.0 1.8 Minimum Noise Figure NFmin (dB) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 10 20 Drein Current ID (mA) 30 40 NFmin Ga f=2.5GHz, VDS=2V 20 18 14 12 10 8 6 4 2 0 16 Associated Gain Ga (dB) MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. DREIN TO SOURCE VOLTAGE 2.0 1.8 Minimum Noise Figure NFmin (dB) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 1.0 1.5 2.0 2.5 3.0 3.5 Drein to Source Voltage VDS (V) NFmin Ga f=2.5GHz, ID=10mA 20 18 16 12 10 8 6 4 2 0 Associated Gain Ga (dB) 14 @f=2.5GHz, VDS=3V, ID=30mA(non-RF) 40 30 20 10 0 Pout (dBm) 35 30 25 20 15 10 5 0 Id (mA) 50 45 40 -10 -20 -30 -40 -50 -60 -70 -80 -25 -20 -15 -10 -5 0 Pin (dBm) Pout(2tone) IM3L IM3H Id 5 10 15 20 25 www.DataSheet4U.com www.DataSheet4U.com NE3508M04 PACKAGE DIMENSIONS FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD unit mm ( Top View ) ( Bottom View ) 1 (1.05) 4 2 3 Pin Connections 1. Source 2. Drain 3. Source 4. Gate www.DataSheet4U.com 2.0 V79 1.25 1.3 0.1 www.DataSheet4U.com NE3508M04 MOUNTING PAD DIMENSIONS FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD(M04) PACKAGE (UNIT: mm) ( Reference Only ) 1.6 2 0.6 3 1.25 1 0.5 1.3 0.6 4 www.DataSheet4U.com www.DataSheet4U.com Reference Data NE3508M04 S-.


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