IS61C256AH

www.DataSheet4U.com IS61C256AH 32K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES High-speed access time: 10, 12, 15, 20, 25 ns Low active power: 400 mW (typical) Low standby power — 250 µW (typical) CMOS standby — 55 mW (typical) TTL standby Fully static operation: no clock or refresh required TTL compatible inputs and outputs Single 5V power supply ISSI ® MAY 1999 DESCRIPTION The ISSI IS61C256AH is a very high-speed, low power, 32,768 word by 8-bit static RAMs. They are fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns maximum. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) with CMOS input levels. Easy memory expansion is provided by using an active LOW Chip Enable (CE ) input and an active LOW Output Enable (OE ) input. The active LOW Write Enable (WE ) controls both writing and reading of the memory. The IS61C256AH is pin compatible with other 32K x 8 SRAMs and are available in 28-pin PDIP, SOJ, and TSOP (Type I) packages. FUNCTIONAL BLOCK DIAGRAM A0-A14 DECODER 32K X 8 MEMORY ARRAY VCC GND I/O DATA CIRCUIT I/O0-I/O7 COLUMN I/O CE OE WE CONTROL CIRCUIT www.DataSheet4U.com ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibilit...