IS61C256AL

IS61C256AL 32K x 8 HIGH-SPEED CMOS STATIC RAM JANUARY 2020 FEATURES High-speed access time: 10, 12 ns CMOS Low Power Operation — 1 mW (typical) CMOS standby — 125 mW (typical) operating Fully static operation: no clock or refresh required TTL compatible inputs and outputs Single 5V power supply Lead-free available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS61C256AL is a very high-speed, low power, 32,768 word by 8-bit static RAMs. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns maximum. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 150 µW (typical) with CMOS input levels. Easy memory expansion is provided by using an active LOW Chip Enable (CE) input and an active LOW Output Enable (OE) input. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS61C256AL is pin compatible with other 32Kx8 SRAMs and are available in 28-pin SOJ and TSOP (Type I) packages. A0-A14 VDD GND I/O0-I/O7 DECODER 32K X 8 MEMORY ARRAY I/O DATA CIRCUIT COLUMN I/O CE OE WE CONTROL CIRCUIT Copyright © 2020 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any informat...