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BTA10-400C Dataheets PDF



Part Number BTA10-400C
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description (BTA10-B/C) Standard Triacs
Datasheet BTA10-400C DatasheetBTA10-400C Datasheet (PDF)

www.DataSheet4U.com BTA10 B/C BTB10 B/C STANDARD TRIACS . . . FEATURES HIGH SURGE CURRENT CAPABILITY COMMUTATION : (dV/dt)c > 5 V/µs BTA Family : INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION The BTA/BTB10 B/C triac family are high performance glass passivated PNPN devices. These parts are suitables for general purpose applications where high surge current capability is required. Application such as phase control and static switching on inductive or resistive load. ABS.

  BTA10-400C   BTA10-400C



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www.DataSheet4U.com BTA10 B/C BTB10 B/C STANDARD TRIACS . . . FEATURES HIGH SURGE CURRENT CAPABILITY COMMUTATION : (dV/dt)c > 5 V/µs BTA Family : INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION The BTA/BTB10 B/C triac family are high performance glass passivated PNPN devices. These parts are suitables for general purpose applications where high surge current capability is required. Application such as phase control and static switching on inductive or resistive load. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25°C ) I2t value Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/µs Parameter BTA BTB Tc = 90 °C Tc = 95 °C tp = 8.3 ms tp = 10 ms tp = 10 ms Repetitive F = 50 Hz Non Repetitive Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.5 mm from case Parameter 400 VDRM VRRM Repetitive peak off-state voltage Tj = 125 °C 400 BTA / BTB10-... B/C 600 600 700 700 800 800 V 105 100 50 10 50 - 40 to + 150 - 40 to + 125 260 °C °C °C A2s A/µs A Value 10 Unit A A1 A2 G TO220AB (Plastic) ITSM I2t dI/dt Symbol Unit www.DataSheet4U.com March 1995 1/5 www.DataSheet4U.com BTA10 B/C / BTB10 B/C THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient BTA BTB Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz) BTA BTB Parameter Value 60 3.9 3.1 2.9 2.3 °C/W Unit °C/W °C/W Rth (j-c) DC Junction to case for DC GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 10W (tp = 20 µs) IGM = 4A (tp = 20 µs) VGM = 16V (tp = 20 µs). ELECTRICAL CHARACTERISTICS Symbol Test Conditions Quadrant B IGT VD=12V (DC) RL =33Ω Tj=25°C I-II-III IV VGT VGD tgt IL VD=12V (DC) RL =33Ω Tj=25°C Tj=110°C Tj=25°C Tj=25°C I-II-III-IV I-II-III-IV I-II-III-IV I-III-IV II IH * VTM * IDRM IRRM dV/dt * IT= 500mA gate open ITM= 14A tp= 380µs VDRM VRRM Rated Rated Tj=25°C Tj=25°C Tj=25°C Tj=110°C Tj=110°C MAX MAX MAX MAX MIN 250 MAX MAX MAX MIN TYP TYP 40 70 50 1.5 0.01 0.5 100 V/µs 50 100 1.5 0.2 2 20 35 25 mA V mA Suffix C 25 50 V V µs mA mA Unit VD=VDRM R L=3.3k Ω VD=VDRM IG = 500mA dIG/dt = 3A/µs IG=1.2 IGT Linear slope up to VD =67%VDRM gate open (dI/dt)c = 4.4A/ms (dV/dt)c * Tj=110°C MIN 10 5 V/µs * For either polarity of electrode A2 voltage with reference to electrode A1. www.DataSheet4U.com 2/5 www.DataSheet4U.com www.DataSheet4U.com BTA10 B/C / BTB10 B/C ORDERING INFORMATION Package IT(RMS) A BTA (Insulated) 10 VDRM / VRRM V 400 600 700 800 BTB (Uninsulated) 400 600 700 800 B X X X X X X X X Sensitivity Specification C X X X X X X X X Fig.1 : Maximum RMS power dissipation versus RMS on-state current (F=50Hz). (Curves are cut off by (dI/dt)c limitation) Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTA). P (W) Tcase (o C) Rth = 0 o C/W 2.5 o C/W 5 o C/W 7.5 o C/W P(W) 14 12 10 8 6 4 2 0 0 1 180 O 14 -85 -90 -95 -100 -105 -110 = 180 = 120 = 90 = 60 = 30 o o o o o 12 10 8 6 4 -115 Tamb ( C) o I T(RMS) (A) 2 3 4 5 6 7 8 9 10 2 0 0 20 -120 60 80 100 120 -125 140 40 Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTB). P (W) Tcase (o C) Rth = 0 o C/W o 2.5 C/W o Fig.4 : RMS on-state current versus case temperature. 14 12 10 8 6 4 2 Tamb ( C) o -90 -95 -100 -105 I T(RMS) (A) 12 10 BTA BTB 5 C/W 7.5 o C/W 8 6 -110 -115 -120 20 40 60 80 100 120 -125 140 4 2 = 180 o Tcase( C) 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 o 0 0 www.DataSheet4U.com 3/5 www.DataSheet4U.com BTA10 B/C / BTB10 B/C Fig.5 : Relative variation of thermal impedance versus pulse duration. Fig.6 : Relative variation of gate trigger current and holding current versus junction temperature. Zth/Rth 1 Zt h( j-c) 0.1 Zt h(j-a) tp( s) 0.01 1E-3 1E-2 1E-1 1E +0 1 E +1 1 E +2 5 E +2 Fig.7 : Non Repetitive surge peak on-state current versus number of cycles. Fig.8 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t ≤ 10ms, and corresponding value of I2t. Fig.9 : On-state characteristics (maximum values). www.DataSheet4U.com 4/5 www.DataSheet4U.com BTA10 B/C / BTB10 B/C PACKAGE MECHANICAL DATA TO220AB Plastic REF. A G I D B J H F O P L C M = N = A B C D F G H I J L M N O P DIMENSIONS Millimeters Inches Min. Max. Min. Max. 10.20 10.50 0.401 0.413 14.23 15.87 0.560 0.625 12.70 14.70 0.500 0.579 5.85 6.85 0.230 0.270 4.50 0.178 2.54 3.00 0.100 0.119 4.48 4.82 0.176 0.190 3.55 4.00 0.140 0.158 1.15 1.39 0.045 0.055 0.35 0.65 0.013 0.026 2.10 2.70 0.082 0.107 4.58 5.58 0.18 0.22 0.80 1.20 0.031 0.048 0.64 0.96 0.025 0.038 Cooling method : C Marking : type number Weight : 2.3 g Recommended torque value : 0.8 m.N. Maximum.


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