TC55B4257J

TOSHIBA 1l:55B4257J-12/15/20 SILICON GATE BiCMOS 262,144 WORD x 4 BIT BiCMOS STATIC RAM Description The TC55B4257J is a 1,048,576 bit high speed BiCMOS static random access memory organized as 262,144 words by 4 bits and operated from a single 5V supply. Toshiba's BiCMOS technology and advanced circuit design enable high speed operation. The TC55B4257J features low power dissipation when the device is deselected using chip enable (CE), and has an output enable input (OE) for fast memory access. The TC55B4257J is suitable for use in applications where high speed is required such as cache memory, high speed storage, and main memory. All inputs and outputs are TIL compatible. The TC55B4257J is available in a 400mil width, 32-pin SOJ suitable for high density surface assembly. Features Fast access time - TC55B4257J-12 12ns (max.) - TC55B4257J-15 15ns (max.) - TC55B4257J-20 20ns (max.) Low power dissipation - Operation: - TC55B4257J-12 130mA (max.) - TC55B4257J-15 130mA (max.) - TC55B4257J-20 130mA (max.) - Standby: 12mA (max.) Single 5V power supply: 5V±10% Fully static operation Inputs and outputs TIL compatible Output buffer control: OE Package: - TC55B4257J : SOJ32-P-400A Pin Names AO -A17 1/01 - 1/04 CE WE OE Voo GND NC Address Inputs Data Inputs/Outputs Chip Enable Input Write Enable Input Output Enable Input Power (+5V) Ground No Connection Pin Connection (Top View) TCSSB4257j I/Ot Voo GND 1/02 WE At7 Al6 A1S A4 AS A6 A7 AS 0: 1/04 GND...