32K x 9-Bit BiCMOS Static RAM
TOSHIBA
1l:55B329P/]-10/12
SILICON GATE BiCMOS
32,768 WORD x 9 BIT BiCMOS STATIC RAM
Description
The TC55B329P/J is ...
Description
TOSHIBA
1l:55B329P/]-10/12
SILICON GATE BiCMOS
32,768 WORD x 9 BIT BiCMOS STATIC RAM
Description
The TC55B329P/J is a 294,912 bit high speed BiCMOS static random access memory organized as 32,768 words by 9 bits and operated from a single 5V supply. Toshiba's BiCMOS technology and advanced circuit design enable high speed operation.
The TC55B329P/J features low power dissipation when the device is deselected using chip enable (CE1, CE2) and has an output enable input (OE) for fast memory access.
The TC55B329P/J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and outputs are TTL compatible.
The TC55B329P/J is available in a 300mil width, 32-pin DIP and SOJ suitable for high density surface assembly.
Features
Fast access time
- TC55B329P/J-10 10ns (max.) - TC55B329P/J-12 12ns (max.)
Low power dissipation
- Operation:
- TC55B329P/J-10 170mA (max.)
- TC55B329P/J-12 170mA (max.)
- Standby:
15mA (max.)
Single 5V power supply: 5V±10%
Fully static operation
Inputs and outputs TTL compatible
Output buffer control: OE
Package:
- TC55B329P: DIP32-P-300 - TC55B329J: SOJ32-P-300
Pin Names AO - A14 1/01 - 1/09 CEf,CE2 WE OE VDD GND NC
Address Inputs Data Inputs/Outputs Chip Enable Inputs Write Enable Input Output Enable Input Power (+5V) Ground No Connection
Pin Connection (Top View)
TC558329P
NC Voo NC A8 A7 A6 A13 AS A9 A4 A10 A3 All A2 OE Al Al2 AO CEl
1/01 1/09 1/02 1/08
1/03 1/07 1/04 1/06 GNO ...
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