2SB1548. B1548 Datasheet

B1548 2SB1548. Datasheet pdf. Equivalent

B1548 Datasheet
Recommendation B1548 Datasheet
Part B1548
Description 2SB1548
Feature B1548; Power Transistors 2SB1548, 2SB1548A Silicon PNP epitaxial planar type For power amplification Com.
Manufacture Panasonic Semiconductor
Datasheet
Download B1548 Datasheet





Panasonic Semiconductor B1548
Power Transistors
2SB1548, 2SB1548A
Silicon PNP epitaxial planar type
For power amplification
Complementary to 2SD2374 and 2SD2374A
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
I Features
High forward current transfer ratio hFE which has satisfactory
φ 3.2±0.1
linearity
Low collector to emitter saturation voltage VCE(sat)
Full-pack package which can be installed to the heat sink with one
screw
/ I Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
e ) Collector to base 2SB1548
VCBO
60
V
c type voltage
2SB1548A
80
n d ge. ed Collector to
2SB1548
VCEO
60
V
sta tinu emitter voltage 2SB1548A
80
a e cle con Emitter to base voltage
VEBO
5
V
lifecy , dis Peak collector current
ICP
5
A
n u ct ped Collector current
IC
3
A
rodu d ty Collector power TC = 25°C
PC
25
W
te tin urP tinue dissipation
Ta = 25°C
2
fo on Junction temperature
Tj
150
°C
ing isc Storage temperature
Tstg
55 to +150
°C
2.54±0.30
5.08±0.50
123
1 : Base
2 : Collector
3 : Emitter
TO-220D-A1 Package
in n follow ned d I Electrical Characteristics TC = 25°C
es pla Parameter
Symbol
Conditions
Min Typ Max Unit
a o includ type, Collector cutoff
c ed ce current
2SB1548
2SB1548A
tinu nan Collector cutoff
M is con inte current
2SB1548
2SB1548A
/Dis ma Emitter cutoff current
ce pe, Collector to emitter
D nan e ty voltage
2SB1548
2SB1548A
ICES
ICEO
IEBO
VCEO
VCE = 60 V, VBE = 0
VCE = 80 V, VBE = 0
VCE = 30 V, IB = 0
VCE = 60 V, IB = 0
VEB = 5 V, IC = 0
IC = 30 mA, IB = 0
200 µA
200
300 µA
300
1
mA
60
V
80
inte anc Forward current transfer ratio
Ma ainten Base to emitter voltage
ed m Collector to emitter saturation voltage
(plan Transition frequency
hFE1 *
hFE2
VBE
VCE(sat)
fT
VCE = 4 V, IC = 1 A
70
VCE = 4 V, IC = 3 A
10
VCE = 4 V, IC = 3 A
IC = 3 A, IB = 0.375 A
VCE = 10 V, IC = 0.5 A, f = 10 MHz
250
1.8
V
1.2
V
30
MHz
Turn-on time
ton
IC = 1 A, IB1 = 0.1 A, IB2 = 0.1 A
0.5
µs
Storage time
tstg
1.2
µs
Fall time
tf
0.3
µs
Note) *: Rank classification
Rank
Q
hFE1
70 to 150
P
120 to 250
Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the
rank classification.
156



Panasonic Semiconductor B1548
Power Transistors
2SB1548, 2SB1548A
PC Ta
IC VCE
IC VBE
40
6
36
(1) TC=Ta
(2) Without heat sink (PC=2W)
5
32
28
(1)
4
24
8
TC=25˚C
7
6
IB=100mA
80mA
5
VCE=4V
TC=25˚C
20
3
60mA
4
40mA
16
12
8
4 (2)
0
/ 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
30mA
2
20mA
16mA
12mA
1
8mA
4mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base to emitter voltage VBE (V)
ce type) VCE(sat) IC
e. d 10
n d tag ue IC/IB=10
s tin TC=25˚C
3
a e cycle iscon 1
life d, d 0.3
n u duct type 0.1
te tin rPro ued 0.03
fou ontin 0.01
wing disc 0.003
in n follo ned 0.001
s la 0.01 0.03 0.1 0.3 1 3 10
a o lude e, p Collector current IC (A)
10000
3000
1000
hFE IC
VCE=4V
TC=25˚C
300
100
30
10
3
1
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
1000
300
100
fT IC
VCE=10V
f=10MHz
TC=25˚C
30
10
3
1
0.3
0.1
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
c ued inc nce typ Area of safe operation (ASO)
M is ntin tena 100
isco ain 30
ce/D pe, m 10
D an ty ICP
103
Non repetitive pulse
TC=25˚C
102
ten ce 3
in n IC
t=1ms
10
a na 1
DC
10ms
M inte 1
a 0.3
d m 0.1
(plane 0.03
101
Rth(t) t
(1) Without heat sink
(2) With a 100 × 80 × t2mm Al heat sink
(1)
(2)
0.01
102
1 3 10 30 100 300 1000
104
103
102
101
1
10
102
103
104
Collector to emitter voltage VCE (V)
Time t (s)
157



Panasonic Semiconductor B1548
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c ty defect which may arise later in your equipment.
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