PMV31XN

www.DataSheet4U.com PMV31XN µTrenchMOS™ extremely low level FET Rev. 01 — 26 February 2003 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV31XN in SOT23. 2. Features s s s s TrenchMOS™ technology Very fast switching Low threshold voltage Surface mount package. 3. Applications s Battery powered motor control s High-speed switch in set top box power supplies. 4. Pinning information Table 1: Pin 1 2 3 Pinning - SOT23, simplified outline and symbol Description gate (g) 3 d Simplified outline Symbol source (s) drain (d) 1 Top view 2 MSB003 g s MBB076 SOT23 www.DataSheet4U.com www.DataSheet4U.com Philips Semiconductors PMV31XN µTrenchMOS™ extremely low level FET 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions 25 °C ≤ Tj ≤ 150 °C Tsp = 25 °C; VGS = 4.5 V Tsp = 25 °C VGS = 4.5 V; ID = 1.5 A; Tj = 25 °C VGS = 2.5 V; ID = 1 A; Tj = 25 °C Typ 31 44 Max 20 5.9 2 150 37 53 Unit V A W °C mΩ mΩ drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDSR VGS ID IDM Ptot Tstg Tj IS drain-source voltage (DC) drain-source voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storag...