PMV40UN

www.DataSheet4U.com PMV40UN TrenchMOS™ ultra low level FET Rev. 01 — 05 August 2003 M3D088 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV40UN in SOT23. 1.2 Features s Ultra low level threshold s Surface mount package. 1.3 Applications s Battery management s High-speed switch. 1.4 Quick reference data s VDS ≤ 30 V s Ptot ≤ 1.9 W s ID ≤ 4.9 A s RDSon ≤ 47 mΩ. 2. Pinning information Table 1: Pin 1 2 3 Pinning - SOT23, simplified outline and symbol Description gate (g) source (s) drain (d) g 1 Top view 2 MBB076 MSB003 Simplified outline 3 Symbol d s SOT23 www.DataSheet4U.com www.DataSheet4U.com Philips Semiconductors PMV40UN TrenchMOS™ ultra low level FET 3. Ordering information Table 2: Ordering information Package Name PMV40UN Description plastic surface mounted package; 3 leads Version SOT23 Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tsp = 25 °C peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs Tsp = 25 °C; VGS = 4.5 V; Figure 2 and 3 Tsp = 100 °C; VGS = 4.5 V; Figure 2 Tsp = ...