PMV65XP

www.DataSheet4U.com PMV65XP P-channel TrenchMOS™ extremely low level FET Rev. 01 — 28 September 2004 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Low threshold voltage s Low on-state resistance. 1.3 Applications s Low power DC-to-DC converters s Load switching s Battery management s Battery powered portable equipment. 1.4 Quick reference data s VDS ≤ −20 V s RDSon ≤ 76 mΩ s ID ≤ −3.9 A s Qgd = 0.65 nC (typ). 2. Pinning information Table 1: Pin 1 2 3 Discrete pinning Description gate (g) source (s) drain (d) g Simplified outline 3 Symbol d 1 2 SOT23 s 003aaa671 SOT23 www.DataSheet4U.com www.DataSheet4U.com Philips Semiconductors PMV65XP P-channel TrenchMOS™ extremely low level FET 3. Ordering information Table 2: Ordering information Package Name PMV65XP SOT23 Description Plastic surface mounted package; 3 leads Version SOT23 Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tsp = 25 °C peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs Tsp = 25 °C; VGS = −4.5 V; Figure 2 and 3...