N-Channel Enhancement-Mode MOSFET
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Semiconductor
STK1828UF
N-Channel Enhancement-Mode MOSFET
Description
• High speed switching appl...
Description
www.DataSheet4U.com
Semiconductor
STK1828UF
N-Channel Enhancement-Mode MOSFET
Description
High speed switching application. Analog switch application.
Features
2.5V Gate drive. Low threshold voltage : Vth = 0.5~1.5V. High speed.
Ordering Information
Type NO. STK1828UF Marking K28 Package Code SOT-323F
Outline Dimensions
unit :
mm
2.1±0.1 1.30±0.1 0.30~0.40 0.70-0.15
+0.1
1
1.30 BSC 2.0±0.1
3 2
0.11±0.05
w
w
w
.D
at
h S a
t e e
4U
.
m o c
PIN Connections 1. Gate 2. Source 3. Drain
KST-3058-000
0~0.1
1
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STK1828UF
Absolute maximum ratings
Characteristic
Drain-Source voltage Gate-Source voltage DC Drain current Drain Power dissipation Channel temperature Storage temperature range
(Ta=25°C)
Symbol
VDS VGSS ID PD Tch Tstg
Ratings
20 10 50 200 150 -55~150
Unit
V V mA mW °C °C
Electrical Characteristics
Characteristic
Drain-Source breakdown voltage Gate-Threshold voltage Drain cut-off current Gate leakage current Drain-Source on-resistance Forward transfer admittance Input capacitance Output capacitance Reverse Transfer capacitance Turn-on time Turn-off time £ü
(Ta=25°C)
Symbol
BVDSS Vth IDSS IGSS RDS(ON) Yfs£ü Ciss Coss Crss tON tOFF
Test Condition
ID=100µA, VGS=0 ID=0.1mA, VDS=3V VDS=20V, VGS=0 VGS=10V, VDS=0 VGS=2.5V, ID=10mA VDS=3V, ID=10mA VDS=3V, VGS=0, f=1MHz VDS=3V, VGS=0, f=1MHz VDS=3V, VGS=0, f=1MHz VDD=3V, ID=10mA VGEN=0~2.5V VDD=3V, ID=10mA VGEN=0~2.5V
Min. Typ. Max.
20 0.5 1.5 1 1 10 20 5.5 6.5 1.6 0.14 0....
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