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STK1828UF

AUK

N-Channel Enhancement-Mode MOSFET

www.DataSheet4U.com Semiconductor STK1828UF N-Channel Enhancement-Mode MOSFET Description • High speed switching appl...


AUK

STK1828UF

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Description
www.DataSheet4U.com Semiconductor STK1828UF N-Channel Enhancement-Mode MOSFET Description High speed switching application. Analog switch application. Features 2.5V Gate drive. Low threshold voltage : Vth = 0.5~1.5V. High speed. Ordering Information Type NO. STK1828UF Marking K28 Package Code SOT-323F Outline Dimensions unit : mm 2.1±0.1 1.30±0.1 0.30~0.40 0.70-0.15 +0.1 1 1.30 BSC 2.0±0.1 3 2 0.11±0.05 w w w .D at h S a t e e 4U . m o c PIN Connections 1. Gate 2. Source 3. Drain KST-3058-000 0~0.1 1 www.DataSheet4U.com STK1828UF Absolute maximum ratings Characteristic Drain-Source voltage Gate-Source voltage DC Drain current Drain Power dissipation Channel temperature Storage temperature range (Ta=25°C) Symbol VDS VGSS ID PD Tch Tstg Ratings 20 10 50 200 150 -55~150 Unit V V mA mW °C °C Electrical Characteristics Characteristic Drain-Source breakdown voltage Gate-Threshold voltage Drain cut-off current Gate leakage current Drain-Source on-resistance Forward transfer admittance Input capacitance Output capacitance Reverse Transfer capacitance Turn-on time Turn-off time £ü (Ta=25°C) Symbol BVDSS Vth IDSS IGSS RDS(ON) Yfs£ü Ciss Coss Crss tON tOFF Test Condition ID=100µA, VGS=0 ID=0.1mA, VDS=3V VDS=20V, VGS=0 VGS=10V, VDS=0 VGS=2.5V, ID=10mA VDS=3V, ID=10mA VDS=3V, VGS=0, f=1MHz VDS=3V, VGS=0, f=1MHz VDS=3V, VGS=0, f=1MHz VDD=3V, ID=10mA VGEN=0~2.5V VDD=3V, ID=10mA VGEN=0~2.5V Min. Typ. Max. 20 0.5 1.5 1 1 10 20 5.5 6.5 1.6 0.14 0....




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