K2225

2SK2225 Silicon N-Channel MOS FET Application High speed power switching Features High breakdown voltage (VDSS = 1500 V) High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter Outline TO-3PFM ADE-208-140 1st. Edition D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK2225 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I *1 D(pulse) I DR Pch*2 Tch Tstg Ratings Unit 1500 V ±20 V 2 A 7 A 2 A 50 W 150 °C –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS 1500 Gate to source leak current IGSS — Zero gate voltage drain current IDSS — Gate to source cutoff voltage VGS(off) 2.0 Static drain to source on state RDS(on) — resistance Forward transfer admittance |yfs| 0.45 Typ — — — — 9 0.75 Max — ±1 500 4.0 12 — Input capacitance Ciss — Output capacitance Coss — Reverse transfer capacitance Crss — Turn-on delay time t d(on) — Rise time tr — Turn-off delay time t d(off) — Fall time tf — Body to drain diode forward VDF — voltage Body to drain diode reverse trr — recovery time Note 1. Pulse Test 990 — 125 — 60 — 17 — 50 — 150 — 50 — ...