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Epitaxial Type. MP4304 Datasheet

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Epitaxial Type. MP4304 Datasheet






MP4304 Type. Datasheet pdf. Equivalent




MP4304 Type. Datasheet pdf. Equivalent





Part

MP4304

Description

TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type



Feature


w w w . D a t a S h e e t 4 U . c o m MP4304 TOSHIBA Power T ransistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1 ) MP4304 High Power Switching Applicat ions. Hammer Drive, Pulse Motor Drive a nd Inductive Load Switching. Industrial Applications Unit: mm · · · · Sm all package by full molding (SIP 12 pin ) High collector power.
Manufacture

Toshiba Semiconductor

Datasheet
Download MP4304 Datasheet


Toshiba Semiconductor MP4304

MP4304; dissipation (4 devices operation) : PT = 4.4 W (Ta = 25°C) High collector cur rent: IC (DC) = 3 A (max) High DC curre nt gain: hFE = 600 (min) (VCE = 2 V, IC = 1 A) Maximum Ratings (Ta = 25°C) C haracteristics Collector-base voltage C ollector-emitter voltage Emitter-base v oltage Collector current Continuous bas e current Collector power dissipation ( 1 device operation) .


Toshiba Semiconductor MP4304

Collector power dissipation (4 devices o peration) Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Rating 80 80 7 3 5 0.5 2.2 Unit V V V A A W JEDEC JEIT A TOSHIBA ― ― 2-32C1B Weight: 3.9 g (typ.) PT Tj Tstg 4.4 150 −55 to 150 W °C °C Array Configuration 2 3 4 9 10 11 1 6 5 w w w .D a S a t h t e e 4U . 8 m.


Toshiba Semiconductor MP4304

o c 12 7 1 2002-11-20 www.DataSheet 4U.com MP4304 Thermal Characteristics Characteristics Thermal resistance of j unction to ambient (4 devices operation , Ta = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from cas e for 10 s) TL 260 °C Symbol Max Unit ΣRth (j-a) 28.4 °C/W Electrical C haracteristics (Ta = 25°C) Characteris tics Collector cut-off .

Part

MP4304

Description

TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type



Feature


w w w . D a t a S h e e t 4 U . c o m MP4304 TOSHIBA Power T ransistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1 ) MP4304 High Power Switching Applicat ions. Hammer Drive, Pulse Motor Drive a nd Inductive Load Switching. Industrial Applications Unit: mm · · · · Sm all package by full molding (SIP 12 pin ) High collector power.
Manufacture

Toshiba Semiconductor

Datasheet
Download MP4304 Datasheet




 MP4304
www.DataSheet4U.com
MP4304
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1)
MP4304
High Power Switching Applications.
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching.
Industrial Applications
Unit: mm
· Small package by full molding (SIP 12 pin)
· High collector power dissipation (4 devices operation)
: PT = 4.4 W (Ta = 25°C)
· High collector current: IC (DC) = 3 A (max)
· High DC current gain: hFE = 600 (min) (VCE = 2 V, IC = 1 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Continuous base current
Collector power dissipation
(1 device operation)
Collector power dissipation
(4 devices operation)
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PT
Tj
Tstg
Rating
80
80
7
3
5
0.5
2.2
Unit
V
V
V
A
A
W
4.4
150
55 to 150
W
°C
°C
Array Configuration
23
4
9 10 11
w
w
w
.
1
6
D
a
t
a
S
5
he
e
t
4
U
.
c8
o
m
12
1
7
JEDEC
JEITA
TOSHIBA
2-32C1B
Weight: 3.9 g (typ.)
2002-11-20




 MP4304
www.DataSheet4U.com
Thermal Characteristics
Characteristics
Thermal resistance of junction to
ambient
(4 devices operation, Ta = 25°C)
Maximum lead temperature for
soldering purposes
(3.2 mm from case for 10 s)
Symbol
Max Unit
ΣRth (j-a)
28.4
°C/W
TL 260 °C
MP4304
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector-emitter
Saturation voltage
Base-emitter
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
IEBO
V (BR) CBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
fT
Cob
VCB = 80 V, IE = 0 A
VEB = 7 V, IC = 0 A
IC = 1 mA, IE = 0 A
IC = 10 mA, IB = 0 A
VCE = 2 V, IC = 1 A
VCE = 2 V, IC = 2 A
IC = 1.5 A, IB = 15 mA
IC = 1.5 A, IB = 15 mA
VCE = 2 V, IC = 0.1 A
VCB = 10 V, IE = 0 A, f = 1 MHz
Min Typ. Max Unit
― ― 10 µA
― ― 10 µA
80 ― ―
V
80 ― ―
V
600
150
0.25 0.5
― ― 1.2
V
85 MHz
50 pF
Turn-on time
Switching time Storage time
Fall time
ton
Input IB1
Output 0.4
tstg
20 µs
IB2
2.6 µs
VCC = 30 V
tf 1.3
IB1 = IB2 = 15 mA, duty cycle 1%
Flyback-Diode Rating and Characteristics (Ta = 25°C)
Characteristics
Maximum forward current
Reverse current
Reverse voltage
www.DaFotrwaarSd vohltaegeet4U.com
Symbol
IFM
IR
VR
VF
Test Condition
VR = 80 V
IR = 100 µA
IF = 1 A
2
Min Typ. Max Unit
―― 3 A
― ― 0.4 µA
80 ― ―
V
― ― 1.5 V
2002-11-20




 MP4304
www.DataSheet4U.com
IC – VCE
3
20 10 Common
emitter
2.5 5 Ta = 25°C
22
1.5
1
1
IB = 0.5 mA
0.5
0
01234567
Collector-emitter voltage VCE (V)
3000
1000
100
25
Ta = 55°C
300
hFE – IC
100
Common emitter
VCE = 1 V
30
0.01
0.03
0.1
0.3
1
Collector current IC (A)
3
MP4304
3.2
Common emitter
2.8 VCE = 1 V
2.4
IC – VBE
2.0
1.6
Ta = 100°C 25
55
1.2
0.8
0.4
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-emitter voltage VBE (V)
1.4
VCE – IB
0.5
Common emitter
Ta = 25°C
0.4
0.3
IC = 3 A
0.2
2
0.1 1
0.5
0.1
0
0.3 1 3 10 30 100 300 1000
Base current IB (mA)
VCE (sat) – IC
3
Common emitter
IC/IB = 100
1
0.5
0.3
.com0.1
UTa = 100°C
0.05
t40.03
55 25
ee0.01
0.03
0.1
0.3 0.5 1
www.DataSh Collector current IC (A)
35
VBE (sat) – IC
10
Common emitter
5 IC/IB = 100
3
1 Ta = 55°C
0.5 25
0.3 100
0.1
0.01
0.03 0.1 0.3 0.5 1
Collector current IC (A)
35
3 2002-11-20



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