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MRF240 Dataheets PDF



Part Number MRF240
Manufacturers Motorola
Logo Motorola
Description RF POWER TRANSISTORS
Datasheet MRF240 DatasheetMRF240 Datasheet (PDF)

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF240/D The RF Line NPN Silicon RF Power Transistors . . . designed for 13.6 volt VHF large–signal class C and class AB linear power amplifier applications in commercial and industrial equipment. • High Common Emitter Power Gain • Specified 13.6 V, 160 MHz Performance: Output Power = 40 Watts Power Gain = 9.0 dB Min Efficiency = 55% Min • Load Mismatch Capability at Rated Voltage and RF Drive • Silicon Nitride.

  MRF240   MRF240


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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF240/D The RF Line NPN Silicon RF Power Transistors . . . designed for 13.6 volt VHF large–signal class C and class AB linear power amplifier applications in commercial and industrial equipment. • High Common Emitter Power Gain • Specified 13.6 V, 160 MHz Performance: Output Power = 40 Watts Power Gain = 9.0 dB Min Efficiency = 55% Min • Load Mismatch Capability at Rated Voltage and RF Drive • Silicon Nitride Passivated • Low Intermodulation Distortion, d3 = – 30 dB Typ MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 16 36 4.0 8.0 100 0.57 – 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C MRF240 40 W, 145 – 175 MHz RF POWER TRANSISTORS NPN SILICON CASE 145A–09, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (2) Symbol RθJC Max 1.75 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 20 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 20 mAdc, VBE = 0) Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) DC Current Gain (IC = 4.0 Adc, VCE = 5.0 Vdc) Output Capacitance (VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz) m V(BR)CEO V(BR)CES V(BR)EBO ICBO 16 36 4.0 — — — — — — — — 10 Vdc Vdc Vdc mAdc taS hee t4U .co ON CHARACTERISTICS hFE 10 70 150 — DYNAMIC CHARACTERISTICS Cob — 90 125 pF ww w.D a NOTES: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. 2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1994 MRF240 1 www.DataSheet4U.com ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit FUNCTIONAL TESTS Common–Emitter Amplifier Power Gain (VCC = 13.6 Vdc, Pout = 40 W, f = 160 MHz) Collector Efficiency (VCC = 13.6 Vdc, Pout = 40 W, f = 160 MHz) GPE η 9.0 55 10 — — — dB % TYPICAL SSB PERFORMANCE Intermodulation Distortion (3) (VCC = 13.6 Vdc, Pout = 35 W (PEP), f1 = 146 MHz, f2 = 146.002 MHz, ICQ = 50 mAdc) IMD (d3) — – 30 — dB NOTE: 3. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone. RFC3 C10 + C9 – C11 + +13.6 V – RFC2 L4 C1 L1 L2 L3 DUT L5 C7 RF OUTPUT C8 RF INPUT C5 RFC1 C2 C3 C4 BEAD C6 taS hee t4U .co C1 — 200 pF, 350 Vdc, UNELCO C2 — 100 pF, 350 Vdc, UNELCO C3 — 40 pF, 350 Vdc, UNELCO C4, C5 — 80 pF, 350 Vdc, UNELCO C6 — 1.0 – 20 pF, ARCO Trimmer C7 — 100 pF 350 Vdc, UNELCO C8 — 0.1 µF ERIE Disc Ceramic C9 — 1.0 µF TANTALUM C10, C11 — 680 pF ALLEN BRADLEY Feedthru RFC1 — 0.15 µH Molded Choke RFC2 — 10 Turns, #18 AWG on 470 Ohm, RFC2 — 1.0 Watt Resistor Bead — FERROXCUBE Bead RFC3 — FERROXCUBE Choke, VK200–4B L1 — 3.3 x 0.2 cm AIRLINE Inductor L2 — 1.0 x 0.2 cm AIRLINE Inductor m L3 — 1.2 x 0.6 cm Brass Pad L4 — 1.2 x 0.6 cm Brass Pad and L4 — 2.0 x 0.2 cm AIRLINE Inductor Board — G10, εr = 5, t = 62 mils Board — 2 sided, 2 oz. Clad Connectors: Type N Figure 1. 160 MHz Test Circuit Schematic ww w.D a MRF240 2 MOTOROLA RF DEVICE DATA www.DataSheet4U.com 50 VCC = 13.6 V Pout , OUTPUT POWER (WATTS) 40 f = 145 MHz 30 160 MHz 75 MHz 20 12 Pout = 40 W 11 G PE, POWER GAIN (dB) VCC = 13.6 V 10 12.5 W 9 8 7 140 10 150 160 170 f, FREQUENCY (MHz) 180 190 1 2 3 4 Pin, INPUT POWER (WATTS) 5 6 Figure 2. Power Gain versus Frequency Figure 3. Output Power versus Input Power 60 Pin = 5 W Pout , OUTPUT POWER (WATTS) 50 4W Pout , OUTPUT POWER (WATTS) 60 Pin = 5 W 50 4W 3W 40 40 3W 30 f = 145 MHz 20 30 f = 160 MHz 20 8 9 10 12 13 14 15 VCC, SUPPLY VOLTAGE (VOLTS) 11 16 17 18 8 9 10 11 12 13 14 15 VCC, SUPPLY VOLTAGE (VOLTS) 16 17 18 Figure 4. Output Power versus Supply Voltage Figure 5. Output Power versus Supply Voltage 60 m Pin = 5 W Pout , OUTPUT POWER (WATTS) 50 4W 40 taS hee t4U .co 3W 30 f = 175 MHz 20 8 9 10 11 12 13 14 15 VCC, SUPPLY VOLTAGE (VOLTS) 16 17 18 Figure 6. Output Power versus Supply Voltage ww w.D a MOTOROLA RF DEVICE DATA MRF240 3 www.DataSheet4U.com –J1.0 –J2.0 0 +J1.0 +J2.0 Zin –J3.0 1.0 160 175 +J3.0 f = 145 MHz Pout = 40 W, VCC = 13.6 Vdc –J4.0 2.0 +J4.0 f MHz 145 160 175 Zin Ohms 1.0 + j0.5 0.98 + j0.6 0.98 + j0.7 ZOL* Ohms 2.8 + j0.3 2.7 + j0.4 2.6 + j0.5 ZOL* 160 175 3.0f = 145 MHz 4.0 ZOL* = Conjugate of the optimum load ZOL* = impedance into which the device ZOL* = operates at a given output power, ZOL* = voltage and frequency. 5.0 Figure 7. Series Equivalent Input/Output Impedances ww w.D a MRF240 4 taS hee t4U .co m .


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