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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF Line
NPN Silicon RF Power Transistors
. . . designed for 13.6 volt VHF large–signal class C and class AB linear power amplifier applications in commercial and industrial equipment. • High Common Emitter Power Gain • Specified 13.6 V, 160 MHz Performance: Output Power = 40 Watts Power Gain = 9.0 dB Min Efficiency = 55% Min • Load Mismatch Capability at Rated Voltage and RF Drive • Silicon Nitride Passivated • Low Intermodulation Distortion, d3 = – 30 dB Typ MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 16 36 4.0 8.0 100 0.57 – 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C
MRF240
40 W, 145 – 175 MHz RF POWER TRANSISTORS NPN SILICON
CASE 145A–09, STYLE 1
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case (2) Symbol RθJC Max 1.75 Unit °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 20 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 20 mAdc, VBE = 0) Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) DC Current Gain (IC = 4.0 Adc, VCE = 5.0 Vdc) Output Capacitance (VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)
m
V(BR)CEO V(BR)CES V(BR)EBO ICBO
16 36 4.0 —
— — — —
— — — 10
Vdc Vdc Vdc mAdc
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ON CHARACTERISTICS
hFE 10 70 150 —
DYNAMIC CHARACTERISTICS
Cob — 90 125 pF
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NOTES: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. 2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1994
MRF240 1
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ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain (VCC = 13.6 Vdc, Pout = 40 W, f = 160 MHz) Collector Efficiency (VCC = 13.6 Vdc, Pout = 40 W, f = 160 MHz) GPE η 9.0 55 10 — — — dB %
TYPICAL SSB PERFORMANCE
Intermodulation Distortion (3) (VCC = 13.6 Vdc, Pout = 35 W (PEP), f1 = 146 MHz, f2 = 146.002 MHz, ICQ = 50 mAdc) IMD (d3) — – 30 — dB
NOTE: 3. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.
RFC3 C10 + C9 – C11 + +13.6 V – RFC2 L4 C1 L1 L2 L3 DUT L5 C7 RF OUTPUT
C8
RF INPUT
C5 RFC1 C2 C3 C4 BEAD
C6
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C1 — 200 pF, 350 Vdc, UNELCO C2 — 100 pF, 350 Vdc, UNELCO C3 — 40 pF, 350 Vdc, UNELCO C4, C5 — 80 pF, 350 Vdc, UNELCO C6 — 1.0 – 20 pF, ARCO Trimmer C7 — 100 pF 350 Vdc, UNELCO C8 — 0.1 µF ERIE Disc Ceramic C9 — 1.0 µF TANTALUM
C10, C11 — 680 pF ALLEN BRADLEY Feedthru RFC1 — 0.15 µH Molded Choke RFC2 — 10 Turns, #18 AWG on 470 Ohm, RFC2 — 1.0 Watt Resistor Bead — FERROXCUBE Bead RFC3 — FERROXCUBE Choke, VK200–4B L1 — 3.3 x 0.2 cm AIRLINE Inductor L2 — 1.0 x 0.2 cm AIRLINE Inductor
m
L3 — 1.2 x 0.6 cm Brass Pad L4 — 1.2 x 0.6 cm Brass Pad and L4 — 2.0 x 0.2 cm AIRLINE Inductor Board — G10, εr = 5, t = 62 mils Board — 2 sided, 2 oz. Clad Connectors: Type N
Figure 1. 160 MHz Test Circuit Schematic
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MRF240 2
MOTOROLA RF DEVICE DATA
www.DataSheet4U.com 50 VCC = 13.6 V Pout , OUTPUT POWER (WATTS) 40 f = 145 MHz 30 160 MHz 75 MHz 20
12
Pout = 40 W
11 G PE, POWER GAIN (dB) VCC = 13.6 V 10 12.5 W 9
8
7 140
10 150 160 170 f, FREQUENCY (MHz) 180 190
1
2
3 4 Pin, INPUT POWER (WATTS)
5
6
Figure 2. Power Gain versus Frequency
Figure 3. Output Power versus Input Power
60 Pin = 5 W Pout , OUTPUT POWER (WATTS) 50 4W Pout , OUTPUT POWER (WATTS)
60 Pin = 5 W 50
4W
3W 40
40
3W
30 f = 145 MHz 20
30 f = 160 MHz 20
8
9
10
12 13 14 15 VCC, SUPPLY VOLTAGE (VOLTS)
11
16
17
18
8
9
10
11 12 13 14 15 VCC, SUPPLY VOLTAGE (VOLTS)
16
17
18
Figure 4. Output Power versus Supply Voltage
Figure 5. Output Power versus Supply Voltage
60
m
Pin = 5 W Pout , OUTPUT POWER (WATTS) 50 4W 40
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3W
30 f = 175 MHz 20 8 9 10 11 12 13 14 15 VCC, SUPPLY VOLTAGE (VOLTS) 16 17 18
Figure 6. Output Power versus Supply Voltage
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MOTOROLA RF DEVICE DATA
MRF240 3
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–J1.0 –J2.0
0
+J1.0 +J2.0
Zin
–J3.0 1.0
160
175
+J3.0
f = 145 MHz Pout = 40 W, VCC = 13.6 Vdc
–J4.0 2.0 +J4.0
f MHz 145 160 175
Zin Ohms 1.0 + j0.5 0.98 + j0.6 0.98 + j0.7
ZOL* Ohms 2.8 + j0.3 2.7 + j0.4 2.6 + j0.5
ZOL* 160 175
3.0f = 145 MHz
4.0
ZOL* = Conjugate of the optimum load ZOL* = impedance into which the device ZOL* = operates at a given output power, ZOL* = voltage and frequency.
5.0
Figure 7. Series Equivalent Input/Output Impedances
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MRF240 4
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m
.