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CPH5839 Dataheets PDF



Part Number CPH5839
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description General-Purpose Switching Device Applications
Datasheet CPH5839 DatasheetCPH5839 Datasheet (PDF)

www.DataSheet4U.com Ordering number : ENN8181 CPH5839 CPH5839 Features • • MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications DC / DC converter applications. Composite type with a N-Channel Sillicon MOSFET (MCH3409) and a schottky barrier diode (SBS005) contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • Low voltage drive. [SBD] • Short reverse recovery time. • Low.

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www.DataSheet4U.com Ordering number : ENN8181 CPH5839 CPH5839 Features • • MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications DC / DC converter applications. Composite type with a N-Channel Sillicon MOSFET (MCH3409) and a schottky barrier diode (SBS005) contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • Low voltage drive. [SBD] • Short reverse recovery time. • Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Average Output Current Surge Forward Current Junction Temperature Nonrepetitive Peak Reverse Surge Voltage VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 30 30 1 10 --55 to +125 --55 to +125 V V A A °C °C VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (600mm2!0.8mm) 1unit 20 ±10 2.0 8.0 0.9 150 --55 to +125 V V A A W °C °C Symbol Conditions Ratings Unit w.D a taS hee t4U .co Storage Temperature Marking : XR Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. m SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 11205PE TS IM TB-00001085 No.8181-1/6 ww www.DataSheet4U.com CPH5839 Electrical Characteristics at Ta=25°C Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance VR VF 1 VF 2 IR C trr Rth(j-a) IR=1mA IF=0.5A IF=1A VR=15V VR=10V, f=1MHz, 1 cycle IF=IR=100mA, See specified Test Circuit. Mounted on a ceramic board (900mm2×0.8mm) 30 0.35 0.42 35 15 110 0.4 0.47 500 V V V µA pF ns °C / W V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=4V ID=0.5A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=4V, ID=2A VDS=10V, VGS=4V, ID=2A VDS=10V, VGS=4V, ID=2A IS=2A, VGS=0 0.4 2.1 3.5 100 130 190 40 25 9 25 25 18 2.7 0.6 0.6 0.87 1.2 130 180 20 1 ±10 1.3 V µA µA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit Package Dimensions unit : mm 2171 2.9 5 4 3 0.15 Electrical Connection 5 4 3 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode 1 2 0.6 1.6 2.8 0.05 0.2 Top view 0.95 m 0.4 1 2 0.6 taS hee t4U .co 0.2 0.4 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5 ww w.D a 0.7 0.9 No.8181-2/6 www.DataSheet4U.com CPH5839 Switching Time Test Circuit [MOSFET] VIN 4V 0V VIN PW=10µs D.C.≤1% ID=1A RL=10Ω VOUT 50Ω 10µs --5V trr 100Ω 10Ω trr Test Circuit [SBD] Duty≤10% VDD=10V 100mA D G CPH5839 P.G 50Ω S 1.6 2.5 3.0V Drain Current, ID -- A 1.4 1.2 Drain Current, ID -- A 2.5V 2.0 6.0V 1.0 0.8 0.6 0.4 0.2 0 1.5 1.0 0.5 taS hee t4U .co 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.4 0.8 1.2 1.6 2.0 IT02688 Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta [MOSFET] 0 0.1 0.2 300 Drain-to-Source Voltage, VDS -- V IT02687 RDS(on) -- VGS [MOSFET] Ta=25°C 250 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 250 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 200 200 1.0A 150 150 ID=0.5A I D= 100 , VG 0.5A 100 .0A I D=1 =4.0V , VGS w.D a 50 50 0 0 1 2 3 4 5 6 7 8 9 10 0 --60 --40 --20 0 20 40 60 C --2 5° C 25° C m Ta= 75° 2.5 S= V 80 100 Ta= 2 120 4.0V 2.0 1.8 VGS=1.5V 5 °C V VDS=10V --2 5° 75°C C 140 160 IT02690 2.0 ID -- VDS [MOSFET] 3.0 .


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