Document
www.DataSheet4U.com Ordering number : ENN8181
CPH5839
CPH5839
Features
• •
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode
General-Purpose Switching Device Applications
DC / DC converter applications. Composite type with a N-Channel Sillicon MOSFET (MCH3409) and a schottky barrier diode (SBS005) contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • Low voltage drive. [SBD] • Short reverse recovery time. • Low forward voltage.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Average Output Current Surge Forward Current Junction Temperature Nonrepetitive Peak Reverse Surge Voltage VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 30 30 1 10 --55 to +125 --55 to +125 V V A A °C °C VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (600mm2!0.8mm) 1unit 20 ±10 2.0 8.0 0.9 150 --55 to +125 V V A A W °C °C Symbol Conditions Ratings Unit
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Storage Temperature
Marking : XR
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
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SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11205PE TS IM TB-00001085 No.8181-1/6
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CPH5839
Electrical Characteristics at Ta=25°C
Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance VR VF 1 VF 2 IR C trr Rth(j-a) IR=1mA IF=0.5A IF=1A VR=15V VR=10V, f=1MHz, 1 cycle IF=IR=100mA, See specified Test Circuit. Mounted on a ceramic board (900mm2×0.8mm) 30 0.35 0.42 35 15 110 0.4 0.47 500 V V V µA pF ns °C / W V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=4V ID=0.5A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=4V, ID=2A VDS=10V, VGS=4V, ID=2A VDS=10V, VGS=4V, ID=2A IS=2A, VGS=0 0.4 2.1 3.5 100 130 190 40 25 9 25 25 18 2.7 0.6 0.6 0.87 1.2 130 180 20 1 ±10 1.3 V µA µA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit
Package Dimensions unit : mm 2171
2.9 5 4 3 0.15
Electrical Connection
5 4 3
1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode
1 2
0.6
1.6
2.8
0.05
0.2
Top view
0.95
m
0.4
1
2
0.6
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0.2
0.4
1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5
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0.7
0.9
No.8181-2/6
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CPH5839
Switching Time Test Circuit
[MOSFET]
VIN 4V 0V VIN PW=10µs D.C.≤1% ID=1A RL=10Ω VOUT
50Ω 10µs --5V trr 100Ω 10Ω
trr Test Circuit
[SBD]
Duty≤10%
VDD=10V
100mA
D
G
CPH5839 P.G 50Ω
S
1.6
2.5
3.0V
Drain Current, ID -- A
1.4 1.2
Drain Current, ID -- A
2.5V
2.0
6.0V
1.0 0.8 0.6 0.4 0.2 0
1.5
1.0
0.5
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0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.4 0.8 1.2 1.6 2.0 IT02688 Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta [MOSFET]
0
0.1
0.2
300
Drain-to-Source Voltage, VDS -- V IT02687 RDS(on) -- VGS [MOSFET] Ta=25°C
250
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
250
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
200
200
1.0A
150
150
ID=0.5A
I D=
100
, VG 0.5A
100
.0A I D=1
=4.0V , VGS
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50
50
0 0 1 2 3 4 5 6 7 8 9 10
0 --60
--40
--20
0
20
40
60
C --2 5° C 25° C
m
Ta= 75°
2.5 S=
V
80
100
Ta= 2
120
4.0V
2.0
1.8
VGS=1.5V
5 °C
V
VDS=10V
--2 5° 75°C C
140 160 IT02690
2.0
ID -- VDS
[MOSFET]
3.0
.