(DSEA16-06BC / DSEC16-06BC) HiPerDynFRED Epitaxial Diode ISOPLUS220
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HiPerDynFREDTM Epitaxial Diode
ISOPLUS220TM
Electrically Isolated Back Surface Preliminary Data She...
Description
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HiPerDynFREDTM Epitaxial Diode
ISOPLUS220TM
Electrically Isolated Back Surface Preliminary Data Sheet
VRSM V 600 600 VRRM V 600 600 DSEA 16-06BC DSEC 16-06BC
1 2 3 DSEA
IFAV VRRM trr
DSEA 16-06BC DSEC 16-06BC = 2x8 A = 600 V = 30 ns
ISOPLUS220TM E153432
2 3
Type
1 DSEC
G
D
S
Isolated back surface
Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg TL Ptot VISOL FC Weight
Conditions TC = 110°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 0.9 A; L = 180 µH VA = 1.5·VR typ.; f = 10 kHz; repetitive
Maximum Ratings 19 8 50 0.1 0.1 -55...+175 175 -55...+150 A A A mJ A °C °C °C °C W V~ N / lb g Applications
z z z z z z z z
Features
z
1.6 mm (0.063 in) from case for 10 s TC = 25°C 50/60 Hz RMS; IISOL ≤ 1 mA mounting force with clip
260 60 2500 11...65 / 2.5...15 2
Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (<15pF) Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0
z z
Symbol IR
c
Conditions TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 8 A; TVJ = 150°C TVJ = 25°C
Characteristic Values typ. max. 60 0.25 1.65 3.0 2.5 0.4 30 1.4 1.9 µA mA V V
z
z
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z z z
VF d RthJC RthCH trr
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