NPT3 IGBT
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FII 30-12E
NPT3 IGBT
Phaseleg Topology
in ISOPLUS i4-PACTM
3 5 4
IC25 = 33 A = 1200 V VCES VCE(sa...
Description
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FII 30-12E
NPT3 IGBT
Phaseleg Topology
in ISOPLUS i4-PACTM
3 5 4
IC25 = 33 A = 1200 V VCES VCE(sat) typ = 2.4 V
1
1 2
5
IGBTs Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot TC = 25°C TC = 90°C VGE = ±15 V; RG = 68 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = 900V; VGE = ±15 V; RG = 68 Ω; TVJ = 125°C non-repetitive TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 33 20 40 VCES 10 150 V V A A A µs W
Features NPT3 IGBT - positive temperature coefficient of saturation voltage for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits HiPerFREDTM diode - fast reverse recovery - low operating forward voltage - low leakage current ISOPLUS i4-PACTM package - isolated back surface - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - industry standard outline - UL registered, E 72873 Applications single phaseleg - buck-boost chopper H bridge - power supplies - induction heating - four quadrant DC drives - controlled rectifier three phase bridge - AC drives - controlled rectifier
Symbol
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.4 2.8 4.5 0.2 200 205 105 320 175 4.1 1.5 1.2 100 1.2 2.9 6.5 0.2 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.8 K/W K/W
VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eof...
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