STD3055L2

www.DataSheet4U.com STU/D3055L2 SamHop Microelectronics Corp. Feb.01 2005 ver1.3 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 20V FEATURES (mW) ID 18A RDS(ON) Max Super high dense cell design for low RDS(ON). 40 @ VGS = 10V 45 @ VGS = 4.5V Rugged and reliable. TO-252 and TO-251 Package. D D G S G D S G STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(l-PAK) S ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted) Parameter Drain-Source Voltage Symbol VDS VGS @TC=25 C ID IDM IS PD TJ, TSTG Limit 20 12 18 30 15 50 -55 to 175 Unit V V A A A W C Gate-Source Voltage taS hee t4U Drain Current-Continuous a -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case R JC R JA 3 50 C /W C /W Thermal Resistance, Junction-to-Ambient ww w.D a .co m 1 www.DataSheet4U.com S T U/D3055L2 E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 16V, V GS = 0V V GS = 12V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID =6.0A V GS =4.5V, ID = 5.2A V DS = 5V, V GS = 4.5V V DS = 10V, ID = 6.0A Min Typ C Max Unit 20 1 100 0.7 1.2 25 30 15 7 614 151 116 1.8 40 45 V uA nA V...