STD30NE06

www.DataSheet4U.com ® STD30NE06 N - CHANNEL 60V - 0.025 Ω - 30A - DPAK STripFET™ " POWER MOSFET PRELIMINARY DATA TYPE STD30NE06 s s s s s V DSS 60 V R DS(on) < 0.03 Ω ID 30 A s TYPICAL RDS(on) = 0.025 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED CHARACTERIZATION FOR TAPE & REEL AND OTHER PACKAGING OPTIONS CONTACT SALES OFFICES 3 1 DPAK TO-252 (Suffix "T4") DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size™ " strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS Parameter Value 60 60 ± 20 o ww w.D ata Sh eet 4U .co m Unit V V V A A A W W/ o C V/ns o o Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Peak Diode Recovery voltage slope o V DGR V GS ID 30 21 120 55 0.37 7 -65 to 175 175 (1) ISD ≤20 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX ID IDM ( ) P tot Derating Factor dv/dt T stg Tj Storage Temperature M...