www.DataSheet4U.com
®
STD30NF03L
N - CHANNEL 30V - 0.020 Ω - 30A DPAK STripFET™ POWER MOSFET
TYPE STD30NF03L
s s s
V...
www.DataSheet4U.com
®
STD30NF03L
N - CHANNEL 30V - 0.020 Ω - 30A DPAK STripFET™ POWER MOSFET
TYPE STD30NF03L
s s s
V DSS 30 V
R DS(o n) < 0.025 Ω
ID 30 A
TYPICAL RDS(on) = 0.020 Ω LOW THRESHOLD DRIVE ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL
3 1
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting
transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS
DPAK TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
Symb ol V DS VGS ID V DGR I D( )
m
ABSOLUTE MAXIMUM RATINGS
Parameter Value 30 30 ± 20 30 19 120
o
Unit V V V A A A W W /o C m/J
o o
taS hee t4U .co
I DM ( ) P tot
Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (pulsed) Drain Current (continuous) at Tc = 100 o C T otal Dissipation at Tc = 25 C Derating Factor
40 0.27 100 -65 to 175 175
( 1) starting Tj = 25 oC, ID = 15A , VDD = 15V
E AS ( 1 ) T st g Tj
Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature
C C
w.D a
() Pulse width limited by safe operating area ()Current limited by the package
October 1999
1...