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STD30NF03L

ST Microelectronics

N-CHANNEL POWER MOSFET

www.DataSheet4U.com ® STD30NF03L N - CHANNEL 30V - 0.020 Ω - 30A DPAK STripFET™ POWER MOSFET TYPE STD30NF03L s s s V...


ST Microelectronics

STD30NF03L

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Description
www.DataSheet4U.com ® STD30NF03L N - CHANNEL 30V - 0.020 Ω - 30A DPAK STripFET™ POWER MOSFET TYPE STD30NF03L s s s V DSS 30 V R DS(o n) < 0.025 Ω ID 30 A TYPICAL RDS(on) = 0.020 Ω LOW THRESHOLD DRIVE ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL 3 1 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS DPAK TO-252 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM Symb ol V DS VGS ID V DGR I D( ) m ABSOLUTE MAXIMUM RATINGS Parameter Value 30 30 ± 20 30 19 120 o Unit V V V A A A W W /o C m/J o o taS hee t4U .co I DM ( ) P tot Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (pulsed) Drain Current (continuous) at Tc = 100 o C T otal Dissipation at Tc = 25 C Derating Factor 40 0.27 100 -65 to 175 175 ( 1) starting Tj = 25 oC, ID = 15A , VDD = 15V E AS ( 1 ) T st g Tj Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature C C w.D a () Pulse width limited by safe operating area ()Current limited by the package October 1999 1...




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