STD30NF06

www.DataSheet4U.com N-CHANNEL 60V - 0.020 Ω - 28A IPAK/DPAK STripFET™ II POWER MOSFET TYPE STD30NF06 s s s s STD30NF06 VDSS 60 V RDS(on) <0.028 Ω ID 28 A s TYPICAL RDS(on) = 0.020Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1") SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4") 3 2 1 IPAK TO-251 (Suffix “-1”) DPAK TO-252 (Suffix “T4”) 3 1 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s MOTOR CONTROL , AUDIO AMPLIFIERS s SOLENOID AND RELAY DRIVERS s DC-DC & DC-AC CONVERTERS ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID ID VDGR m Parameter Value 60 60 ± 20 28 20 112 70 0.47 10 230 -55 to 175 Unit V V V A A A W W/°C V/ns mJ °C 4U (1) IDM() Ptot eet Sh ata dv/dt EAS (2) Tstg Tj () Pulse width limited by safe operating area. March 2002 . .co Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single ...