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2SC2585 Datasheet, Equivalent, RF TRANSISTOR.

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR

 

 

 

Part 2SC2585
Description NPN SILICON RF TRANSISTOR
Feature www.
DataSheet4U.
com 2SC2585 NPN SILICO N RF TRANSISTOR DESCRIPTION: The 2SC25 85 is a Common Emitter Device Designed for Low Niose Amplifier and Medium Powe r Oscillator Applications up to 8.
5 GHz .
PACKAGE STYLE MAXIMUM RATINGS IC VC EO VCBO VEB PT TJ TSTG θJC O O 65 mA 12 V 25 V 1.
5 V 400 mW @ TC = 166 C -65 C to +200 C -65 C to +200 C 85 C/W O O O O DIMENSIONS IN MILLIMETERS 1 = BAS E 3 = COLLECTOR 2 & 4 = EMITTER CHARAC TERISTICS SYMBOL ICBO IEBO hFE ft VCB = 8.
0 V VEB = 1.
0 V VCE = 8.
0 V VCE = 8.
0 V VCB = 10 V VCE = 8.
0 V TC = 25 C O TEST CONDITIONS MINIMUM TYPICAL MAX IMUM 100 100 U .
Manufacture Advanced Semiconductor
Datasheet
Download 2SC2585 Datasheet
Part 2SC2585
Description NPN SILICON RF TRANSISTOR
Feature www.
DataSheet4U.
com 2SC2585 NPN SILICO N RF TRANSISTOR DESCRIPTION: The 2SC25 85 is a Common Emitter Device Designed for Low Niose Amplifier and Medium Powe r Oscillator Applications up to 8.
5 GHz .
PACKAGE STYLE MAXIMUM RATINGS IC VC EO VCBO VEB PT TJ TSTG θJC O O 65 mA 12 V 25 V 1.
5 V 400 mW @ TC = 166 C -65 C to +200 C -65 C to +200 C 85 C/W O O O O DIMENSIONS IN MILLIMETERS 1 = BAS E 3 = COLLECTOR 2 & 4 = EMITTER CHARAC TERISTICS SYMBOL ICBO IEBO hFE ft VCB = 8.
0 V VEB = 1.
0 V VCE = 8.
0 V VCE = 8.
0 V VCB = 10 V VCE = 8.
0 V TC = 25 C O TEST CONDITIONS MINIMUM TYPICAL MAX IMUM 100 100 U .
Manufacture Advanced Semiconductor
Datasheet
Download 2SC2585 Datasheet

2SC2585

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2SC2585

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