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2SC2585
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The 2SC2585 is a Common Emitter Device Designed for Low Niose Amplifier and Medium Power Oscillator Applications up to 8.5 GHz.
PACKAGE STYLE
MAXIMUM RATINGS
IC VCEO VCBO VEB PT TJ TSTG θJC
O O
65 mA 12 V 25 V 1.5 V 400 mW @ TC = 166 C -65 C to +200 C -65 C to +200 C 85 C/W
O O O O
DIMENSIONS IN MILLIMETERS 1 = BASE 3 = COLLECTOR 2 & 4 = EMITTER
CHARACTERISTICS
SYMBOL
ICBO IEBO hFE ft VCB = 8.0 V VEB = 1.0 V VCE = 8.0 V VCE = 8.0 V VCB = 10 V VCE = 8.0 V
TC = 25 C
O
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
100 100
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