www.DataSheet4U.com
2SC2585
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The 2SC2585 is a Common Emitter Device Designed fo...
www.DataSheet4U.com
2SC2585
NPN SILICON RF
TRANSISTOR
DESCRIPTION:
The 2SC2585 is a Common Emitter Device Designed for Low Niose Amplifier and Medium Power Oscillator Applications up to 8.5 GHz.
PACKAGE STYLE
MAXIMUM RATINGS
IC VCEO VCBO VEB PT TJ TSTG θJC
O O
65 mA 12 V 25 V 1.5 V 400 mW @ TC = 166 C -65 C to +200 C -65 C to +200 C 85 C/W
O O O O
DIMENSIONS IN MILLIMETERS 1 = BASE 3 = COLLECTOR 2 & 4 = EMITTER
CHARACTERISTICS
SYMBOL
ICBO IEBO hFE ft VCB = 8.0 V VEB = 1.0 V VCE = 8.0 V VCE = 8.0 V VCB = 10 V VCE = 8.0 V
TC = 25 C
O
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
100 100
UNITS
µA µA --GHz
ww w.D ata Sh eet 4U .co m
IC = 7.0 mA IC = 20 mA f = 1.0 GHz f = 1.0 MHz IC = 20 mA f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz
50
115 8.5 0.2 18.0 11.0 6.5 11.0 15.0 10.0 2.0
250
Ccb
0.6
pF dB dB dB
|S21E| GNF
2
10.0
VCE = 8.0 V VCE = 8.0 V
IC = 7.0 mA IC = 10 mA IC = 7.0 mA
MAG NF
VCE = 8.0 V
2.5
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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