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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Designer's
TMOS E-FET .™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. • Avalanche Energy Specified • Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature
™
Data Sheet
MTP20N20E
Motorola Preferred Device
TMOS POWER FET 20 AMPERES 200 VOLTS RDS(on) = 0.16 OHM
®
D
G S CASE 221A–06, Style 5 TO–220AB
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage — Continuous — Non–Repetitive (tp ≤ 10 ms) Drain — Continuous — Continuous @ 100°C — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Symbol VDSS VDGR VGS VGSM ID ID IDM PD TJ, Tstg EAS RθJC RθJA TL Value 200 200 ± 20 ± 40 20 12 60 125 1.0 – 55 to 150 600 1.00 62.5 260 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C °C mJ °C/W °C
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Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL = 20 Apk, L = 3.0 mH, RG = 25 Ω) Thermal Resistance — Junction to Case — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
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TMOS © Motorola Motorola, Inc. 1995
Power MOSFET Transistor Device Data
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MTP20N20E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 200 Vdc, VGS = 0 Vdc) (VDS = 200 Vdc, VGS = 0 Vdc, TJ = 125°C) Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Temperature Coefficient (Negative) Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 10 Adc) Drain–Source On–Voltage (VGS = 10 Vdc) (ID = 20 Adc) (ID = 10 Adc, TJ = 125°C) Forward Transconductance (VDS = 13 Vdc, ID = 10 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (2) Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Gate Charge (See Figure 8) (VDS = 160 Vdc, ID = 20 Adc, VGS = 10 Vdc) (VDD = 100 Vdc, ID = 20 Adc, VGS = 10 Vdc, RG = 9.1 Ω) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage (1) — — — — — — — — 17 86 50 60 54 12 24 22 40 180 100 120 75 — — — nC ns (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss Coss Crss — — — 1880 378 68 2700 535 100 pF VGS(th) 2.0 — RDS(on) VDS(on) — — gFS 8.0 — — 11 3.84 3.36 — mhos — — 7.0 0.12 4.0 — 0.16 Vdc mV/°C Ohm Vdc V(BR)DSS 200 — IDSS — — IGSS — — — — 10 100 100 nAdc — 263 — — Vdc mV/°C µAdc Symbol Min Typ Max Unit
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(IS = 20 Adc, VGS = 0 Vdc) (IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD — — trr — — — — 1.0 0.82 239 136 103 2.09 1.35 — — — — —
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Reverse Recovery Time (See Figure 14) (IS = 20 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs)
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Reverse Recovery Stored Charge
µC
INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from contact screw on tab to center of die) (Measured from the drain lead 0.25″ from package to center of die) Internal Source Inductance (Measured from the source lead 0.25″ from package to source bond pad) LD — — LS — 3.5 4.5 7.5 — — — nH nH
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(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature.
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Motorola TMOS Power MOSFET Transistor Device Data
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MTP20N20E
TYPICAL ELECTRICAL CHARACTERISTICS
40 I D , DRAIN CURRENT (AMPS)
TJ = 25°C
40 VGS = 10 V 9V 8V 7V I D , DRAIN CURRENT (AMPS) 35 30 25 20 15 10 5 100°C VDS ≥ 10 V TJ = –55°C 25°C
30
20 6V 10 5V 0 0 1 2 3 4 5 6 7 8 9 10 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
0 2.0 2.5 3.0 3.5 4.0.