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N Channel Enchancement Mode MOSFET 2.5A DESCRIPTION
ST2304
The ST2304 is the N-Channel logic enha...
www.DataSheet4U.com
N Channel Enchancement Mode MOSFET 2.5A DESCRIPTION
ST2304
The ST2304 is the N-Channel logic enhancement mode power field effect
transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outine surface mount package.
PIN CONFIGURATION SOT-23-3L 3
FEATURE z 30V/2.5A, RDS(ON) = 70m-ohm @VGS = 10V z 30V/2.0A, RDS(ON) = 105m-ohm @VGS = 4.5V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOT-23-3L package design
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STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295
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N Channel Enchancement Mode MOSFET 2.5A
ST2304
ABSOULTE MAXIMUM RATINGS (Ta = 25¢J Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150¢J ) TA=25¢J TA=70¢J Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient TA=25¢J TA=7...