CY62158CV30

www.DataSheet4U.com CY62158CV25/30/33 MoBL™ 1024K x 8 MoBL Static RAM Features High Speed — 55 ns and 70 ns availability Voltage range: — CY62158CV25: 2.2V–2.7V — CY62158CV30: 2.7V–3.3V — CY62158CV33: 3.0V–3.6V Ultra low active power — Typical active current: 1.5 mA @ f = 1 MHz — Typical active current: 5.5 mA @ f = fmax(70 ns speed) Low standby power Easy memory expansion with CE1, CE2 and OE features Automatic power-down when deselected CMOS for optimum speed/power in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected (CE1 HIGH or CE2 LOW). Writing to the device is accomplished by taking Chip Enable 1 (CE1) and Write Enable (WE) inputs LOW and Chip Enable 2 (CE2) HIGH. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A19). Reading from the device is accomplished by taking Chip Enable 1 (CE1) and Output Enable (OE) LOW and Chip Enable 2 (CE2) HIGH while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins. The eight input/output pins (I/O0 through I/O7) are placed in a high-impedance state when the device is deselected (CE1 LOW and CE2 HIGH), the outputs are ...