Document
MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP)
Complementary Power Transistors
D2PAK for Surface Mount
Complementary power transistors are for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.
Features
• Low Collector−Emitter Saturation Voltage −
VCE(sat) = 1.0 V (Max) @ 8.0 A
• Fast Switching Speeds • Complementary Pairs Simplifies Designs • Epoxy Meets UL 94 V−0 @ 0.125 in • ESD Ratings: Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
• NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous − Peak
Symbol VCEO VEB
IC
Value 80
5
10 20
Unit Vdc Vdc Adc
Total Power Dissipation @ TC = 25°C Derate above 25°C
PD
50
W
0.4
W/°C
Total Power Dissipation @ TA = 25°C Derate above 25°C
Operating and Storage Junction Temperature Range
PD TJ, Tstg
2.0 0.016
−55 to 150
W W/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
2.5
°C/W
Thermal Resistance, Junction−to−Ambient RqJA
75
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2013
1
May, 2013 − Rev. 5
http://onsemi.com
SILICON POWER TRANSISTORS 10 AMPERES, 80 VOLTS, 50 WATTS
MARKING DIAGRAM
D2PAK CASE 418B
STYLE 1
B4xH11G AYWW
x = 4 or 5 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
MJB44H11G
D2PAK (Pb−Free)
50 Units/Rail
MJB44H11T4G
D2PAK 800/Tape & Reel (Pb−Free)
NJVMJB44H11T4G D2PAK 800/Tape & Reel (Pb−Free)
MJB45H11G
D2PAK (Pb−Free)
50 Units/Rail
MJB45H11T4G
D2PAK 800/Tape & Reel (Pb−Free)
NJVMJB45H11T4G D2PAK 800/Tape & Reel (Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
Publication Order Number: MJB44H11/D
MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic
OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 30 mA, IB = 0) Collector Cutoff Current (VCE = Rated VCEO, VBE = 0) Emitter Cutoff Current (VEB = 5 Vdc) ON CHARACTERISTICS Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc) Base−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) DC Current Gain (VCE = 1 Vdc, IC = 2 Adc) DC Current Gain (VCE = 1 Vdc, IC = 4 Adc) DYNAMIC CHARACTERISTICS Collector Capacitance (VCB = 10 Vdc, ftest = 1 MHz)
MJB44H11, NJVMJB44H11 MJB45H11, NJVMJB45H11
Gain Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz) MJB44H11, NJVMJB44H11 MJB45H11, NJVMJB45H11
SWITCHING TIMES Delay and Rise Times(IC = 5 Adc, IB1 = 0.5 Adc)
MJB44H11, NJVMJB44H11 MJB45H11, NJVMJB45H11
Storage Time(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
MJB44H11, NJVMJB44H11 MJB45H11, NJVMJB45H11
Fall Time(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
MJB44H11, NJVMJB44H11 MJB45H11, NJVMJB45H11
Symbol VCEO(sus)
ICES IEBO VCE(sat) VBE(sat) hFE
Ccb fT
td + tr ts tf
Min
Typ
Max Unit
80
−
−
Vdc
−
−
10
mA
−
−
50
mA
−
−
1.0
Vdc
−
−
1.5
Vdc
60
−
−
−
40
−
−
pF
−
130
−
−
230
−
MHz
−
50
−
−
40
−
ns
−
300
−
−
135
−
ns
−
500
−
−
500
−
ns
−
140
−
−
100
−
1.0 0.7 D = 0.5 0.5
0.3 0.2
0.2
0.1 0.1
0.07
0.05
0.05 0.02
0.03
0.02 0.01
SINGLE PULSE
0.01
0.01 0.02
0.05 0.1 0.2
ZqJC(t) = r(t) RqJC RqJC = 1.56°C/W MAX D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t)
P(pk)
t1 t2
DUTY CYCLE, D = t1/t2
0.5 1.0 2.0
5.0 10 20
t, TIME (ms)
50 100 200
500 1.0 k
Figure 1. Thermal Response
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
http://onsemi.com 2
IC, COLLECTOR CURRENT (AMPS)
MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP)
100
50 30 20
10
5.0 3.0 2.0
1.0
0.5 0.3 0.2
0.1 1.0
TC ≤ 70° C
dc
DUTY CYCLE ≤ 50%
1.0 ms 100 ms 10 ms
1.0 ms
2.0 3.0 5.0 7.0 10
20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. Maximum Rated Forward Bias Safe Operating Area
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation.