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MJB45H11 Dataheets PDF



Part Number MJB45H11
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description PNP Transistor
Datasheet MJB45H11 DatasheetMJB45H11 Datasheet (PDF)

MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP) Complementary Power Transistors D2PAK for Surface Mount Complementary power transistors are for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 V (Max) @ 8.0 A • Fast Switching Speeds • Complementary Pairs Simplifies Designs • Epoxy Meets UL 94 V.

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MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP) Complementary Power Transistors D2PAK for Surface Mount Complementary power transistors are for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 V (Max) @ 8.0 A • Fast Switching Speeds • Complementary Pairs Simplifies Designs • Epoxy Meets UL 94 V−0 @ 0.125 in • ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • Pb−Free Packages are Available MAXIMUM RATINGS Rating Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous − Peak Symbol VCEO VEB IC Value 80 5 10 20 Unit Vdc Vdc Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 50 W 0.4 W/°C Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD TJ, Tstg 2.0 0.016 −55 to 150 W W/°C °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 2.5 °C/W Thermal Resistance, Junction−to−Ambient RqJA 75 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2013 1 May, 2013 − Rev. 5 http://onsemi.com SILICON POWER TRANSISTORS 10 AMPERES, 80 VOLTS, 50 WATTS MARKING DIAGRAM D2PAK CASE 418B STYLE 1 B4xH11G AYWW x = 4 or 5 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device Package Shipping† MJB44H11G D2PAK (Pb−Free) 50 Units/Rail MJB44H11T4G D2PAK 800/Tape & Reel (Pb−Free) NJVMJB44H11T4G D2PAK 800/Tape & Reel (Pb−Free) MJB45H11G D2PAK (Pb−Free) 50 Units/Rail MJB45H11T4G D2PAK 800/Tape & Reel (Pb−Free) NJVMJB45H11T4G D2PAK 800/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: MJB44H11/D MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 30 mA, IB = 0) Collector Cutoff Current (VCE = Rated VCEO, VBE = 0) Emitter Cutoff Current (VEB = 5 Vdc) ON CHARACTERISTICS Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc) Base−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) DC Current Gain (VCE = 1 Vdc, IC = 2 Adc) DC Current Gain (VCE = 1 Vdc, IC = 4 Adc) DYNAMIC CHARACTERISTICS Collector Capacitance (VCB = 10 Vdc, ftest = 1 MHz) MJB44H11, NJVMJB44H11 MJB45H11, NJVMJB45H11 Gain Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz) MJB44H11, NJVMJB44H11 MJB45H11, NJVMJB45H11 SWITCHING TIMES Delay and Rise Times(IC = 5 Adc, IB1 = 0.5 Adc) MJB44H11, NJVMJB44H11 MJB45H11, NJVMJB45H11 Storage Time(IC = 5 Adc, IB1 = IB2 = 0.5 Adc) MJB44H11, NJVMJB44H11 MJB45H11, NJVMJB45H11 Fall Time(IC = 5 Adc, IB1 = IB2 = 0.5 Adc) MJB44H11, NJVMJB44H11 MJB45H11, NJVMJB45H11 Symbol VCEO(sus) ICES IEBO VCE(sat) VBE(sat) hFE Ccb fT td + tr ts tf Min Typ Max Unit 80 − − Vdc − − 10 mA − − 50 mA − − 1.0 Vdc − − 1.5 Vdc 60 − − − 40 − − pF − 130 − − 230 − MHz − 50 − − 40 − ns − 300 − − 135 − ns − 500 − − 500 − ns − 140 − − 100 − 1.0 0.7 D = 0.5 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.05 0.02 0.03 0.02 0.01 SINGLE PULSE 0.01 0.01 0.02 0.05 0.1 0.2 ZqJC(t) = r(t) RqJC RqJC = 1.56°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.5 1.0 2.0 5.0 10 20 t, TIME (ms) 50 100 200 500 1.0 k Figure 1. Thermal Response r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) http://onsemi.com 2 IC, COLLECTOR CURRENT (AMPS) MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP) 100 50 30 20 10 5.0 3.0 2.0 1.0 0.5 0.3 0.2 0.1 1.0 TC ≤ 70° C dc DUTY CYCLE ≤ 50% 1.0 ms 100 ms 10 ms 1.0 ms 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2. Maximum Rated Forward Bias Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation.


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