IRFP260

www.DataSheet4U.com Standard Power MOSFET N-Channel Enhancement Mode IRFP 260 VDSS ID (cont) RDS(on) = 200 V = 46 A = 55 mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ TJ = 25°C to 150°C = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings 200 200 ±20 ±30 46 184 46 V V V V A A A mJ V/ns W °C °C °C TO-247 AD Continuous Transient TC TC TC = 25°C = 25°C, pulse width limited by TJM = 25°C D (TAB) 28 5 280 -55 ... +150 150 -55 ... +150 G = Gate, S = Source, D = Drain, TAB = Drain ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, IS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Mounting torque 1.13/10 Nm/lb.in. 6 300 g °C Features International standard package JEDEC TO-247 AD Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure High commutating dv/dt rating Fast switching times Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s ww w.D ata Sh eet 4U .co m Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2 4 ±100 TJ = 25°C TJ = 125°C 25 250 V V nA µA µA Ω Applications Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers VDSS VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VGS = ±20 VDC, VDS = 0 VGS(th) IGSS IDSS VDS = 200V VDS = 160V VGS = 0 V Advantages Easy to mount with 1 screw (isolated mounting screw hole) Space savings High power density RDS(on) VGS = 10 V, ID = 28 ...