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IRFP26N60L Dataheets PDF



Part Number IRFP26N60L
Manufacturers International Rectifier
Logo International Rectifier
Description SMPS MOSFET
Datasheet IRFP26N60L DatasheetIRFP26N60L Datasheet (PDF)

www.DataSheet4U.com SMPS MOSFET PD - 94611A IRFP26N60L HEXFET® Power MOSFET Applications • Zero Voltage Switching SMPS VDSS RDS(on) typ. Trr typ. ID • Telecom and Server Power Supplies • Uninterruptible Power Supplies 600V 170ns 26A 210mΩ • Motor Control applications Features and Benefits • SuperFast body diode eliminates the need for external diodes in ZVS applications. • Lower Gate charge results in simpler drive requirements. • Enhanced dv/dt capabilities offer improved ruggedness. TO-247.

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www.DataSheet4U.com SMPS MOSFET PD - 94611A IRFP26N60L HEXFET® Power MOSFET Applications • Zero Voltage Switching SMPS VDSS RDS(on) typ. Trr typ. ID • Telecom and Server Power Supplies • Uninterruptible Power Supplies 600V 170ns 26A 210mΩ • Motor Control applications Features and Benefits • SuperFast body diode eliminates the need for external diodes in ZVS applications. • Lower Gate charge results in simpler drive requirements. • Enhanced dv/dt capabilities offer improved ruggedness. TO-247AC • Higher Gate voltage threshold offers improved noise immunity . Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current IDM Max. 26 17 100 470 Units A W W/°C V V/ns °C c PD @TC = 25°C Power Dissipation VGS dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw d 3.8 ±30 30 -55 to + 150 300 (1.6mm from case ) 1.1(10) ww w.D ata Sh eet 4U .co m N•m (lbf•in) Diode Characteristics Symbol Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 170 210 26 A 100 1.5 250 320 V Conditions MOSFET symbol showing the integral reverse G S D IS ISM VSD Ãc Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time p-n junction diode. TJ = 25°C, IS = 26A, VGS = 0V f trr ns TJ = 25°C, IF = 26A TJ = 125°C, di/dt = 100A/µs nC A J J Qrr 670 1000 7.3 11 ––– 1050 1570 f T = 25°C, I = 26A, V = 0V f T = 125°C, di/dt = 100A/µs f S GS IRRM ton TJ = 25°C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com 1 10/19/04 www.DataSheet4U.com IRFP26N60L Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS RG Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance Min. Typ. Max. Units 600 ––– ––– 3.0 ––– ––– ––– ––– ––– ––– 0.33 210 ––– ––– ––– ––– ––– 0.8 ––– ––– 250 5.0 50 2.0 100 -100 ––– Ω V Conditions VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 16A V VDS = VGS, ID = 250µA µA mA nA VDS = 600V, VGS = 0V VDS = 480V, VGS = 0V, TJ = 125°C VGS = 30V VGS = -30V f = 1MHz, open drain f Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss eff. Coss eff. (ER) Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Out.


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