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SMPS MOSFET
PD - 94611A
IRFP26N60L
HEXFET® Power MOSFET Applications • Zero Voltage Switching SMPS VDSS RDS(on) typ. Trr typ. ID • Telecom and Server Power Supplies • Uninterruptible Power Supplies 600V 170ns 26A 210mΩ • Motor Control applications Features and Benefits • SuperFast body diode eliminates the need for external diodes in ZVS applications. • Lower Gate charge results in simpler drive requirements. • Enhanced dv/dt capabilities offer improved ruggedness. TO-247AC • Higher Gate voltage threshold offers improved noise immunity .
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current IDM
Max.
26 17 100 470
Units
A W W/°C V V/ns °C
c
PD @TC = 25°C Power Dissipation VGS dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw
d
3.8 ±30 30 -55 to + 150 300 (1.6mm from case ) 1.1(10)
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N•m (lbf•in)
Diode Characteristics
Symbol Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)
Min. Typ. Max. Units
––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 170 210 26 A 100 1.5 250 320 V
Conditions
MOSFET symbol showing the integral reverse
G S D
IS
ISM
VSD
Ãc
Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time
p-n junction diode. TJ = 25°C, IS = 26A, VGS = 0V
f
trr
ns TJ = 25°C, IF = 26A TJ = 125°C, di/dt = 100A/µs nC A
J
J
Qrr
670 1000 7.3 11
––– 1050 1570
f T = 25°C, I = 26A, V = 0V f T = 125°C, di/dt = 100A/µs f
S GS
IRRM ton
TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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10/19/04
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IRFP26N60L
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS RG
Parameter
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance
Min. Typ. Max. Units
600 ––– ––– 3.0 ––– ––– ––– ––– ––– ––– 0.33 210 ––– ––– ––– ––– ––– 0.8 ––– ––– 250 5.0 50 2.0 100 -100 ––– Ω V
Conditions
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 16A V VDS = VGS, ID = 250µA µA mA nA VDS = 600V, VGS = 0V VDS = 480V, VGS = 0V, TJ = 125°C VGS = 30V VGS = -30V f = 1MHz, open drain
f
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss eff. Coss eff. (ER)
Parameter
Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Out.