SUB85N10-10

SUP85N10-10, SUB85N10-10 Vishay Siliconix N-Channel 100-V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 100 0.0105 at VGS = 10 V 0.012 at VGS = 4.5 V TO-220AB ID (A) 85a FEATURES TrenchFET® Power MOSFET 175 °C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC TO-263 D DRAIN connected to TAB GD S Top View SUP85N10-10 ORDERING INFORMATION Package TO-220AB TO-263 G DS Top View SUB85N10-10 G S N-Channel MOSFET Lead (Pb)-free SUP85N10-10-E3 SUB85N10-10-E3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 125 °C ID IDM Avalanche Current Single Pulse Avalanche Energyb L = 0.1 mH IAS EAS Maximum Power Dissipationb TC = 25 °C (TO-220AB and TO-263) TA = 25 °C (TO-263)d Operating Junction and Storage Temperature Range PD TJ, Tstg Limit 100 ± 20 85a 60a 240 75 280 250c 3.75 - 55 to 175 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve fo voltage derating. d. When mounted on 1" square PCB (FR-4 material). PCB Mount (TO-263)d Free Air (TO-220AB) Symbol RthJA RthJC Limit 40 62.5 0.6 Document Number: 71141 S10-0107-Rev. E, 18-Jan-10 Unit V A mJ W °C Unit °C/W www.vishay.com 1 SUP85N10-10, SUB85N10-10 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol...