SUB85N02-03

www.DataSheet4U.com SUP/SUB85N02-03 New Product Vishay Siliconix N-Channel 20-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 0.003 @ VGS = 4.5 V ID (A)a 85 85 85 20 0.0034 @ VGS = 2.5 V 0.0038 @ VGS = 1.8 V TO-220AB D TO-263 G DRAIN connected to TAB G G D S Top View SUP85N02-03 SUB85N02-03 D S Top View S www.DataSheet4U.com Parameter Symbol VDS VGS TC = 25_C TC = 100_C ID IDM IAR N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Limit 20 "8 85 85 240 30 45 250 –55 to 175 mJ W _C A V Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)a Pulsed Drain Current Avalanche Current Repetitive Avalanche Power Dissipationa Operating Junction and Storage Temperature Range Energyb L = 0.1 mH TC = 25_C EAR PD TJ, Tstg THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)c Junction-to-Ambient Junction-to-Case Notes: a. See SOA curve for voltage derating. b. Duty cycle v 1%. c. When mounted on 1” square PCB (FR-4 material). Document Number: 71421 S-03181—Rev. A, 05-Mar-01 www.vishay.com Free Air (TO-220AB) RthJA RthJC Symbol Limit 40 62.5 0.6 Unit _C/W 1 www.DataSheet4U DataSheet4U.com www.DataSheet4U.com SUP/SUB85N02-03 Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V...