SUB75P05-08

www.DataSheet4U.com SUP/SUB75P05-08 New Product Vishay Siliconix P-Channel 55-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) –55 rDS(on) (W) 0.008 ID (A) –75a TO-220AB S TO-263 G DRAIN connected to TAB G D S Top View SUP75P05-08 G D S D Top View SUB75P05-08 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol VDS VGS TC = 25_C TC = 150_C ID IDM IAR L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 125_C (TO-263)c EAR PD TJ, Tstg www.DataSheet4U.com Limit –55 "20 –75a –47 –240 –75 280 250d Unit V Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Power Dissipation A mJ W 3.7 –55 to 175 _C Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)c Junction-to-Ambient Free Air (TO-220AB) Junction-to-Case Notes: a. Package limited. b. Duty cycle v 1%. c. When mounted on 1” square PCB (FR-4 material). d. See SOA curve for voltage derating. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70891 S-99404—Rev. B, 29-Nov-99 www.vishay.com S FaxBack 408-970-5600 RthJA RthJC 62.5 0.6 Symbol RthJA Limit 40 Unit _C/W 2-1 www.DataSheet4U DataSheet4U.com www.DataSheet4U.com SUP/SUB75P05-08 Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate...