SUB75N06-12L

www.DataSheet4U.com SUP/SUB75N06-12L Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (W) 0.012 @ VGS = 10 V 0.014 @ VGS = 4.5 V ID (A) 75 70 D TO-220AB TO-263 G DRAIN connected to TAB G G D S Top View SUP75N06-12L SUB75N06-12L N-Channel MOSFET D S Top View S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Power Dissipation L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)c TC = 25_C TC = 100_C www.DataSheet4U.com Symbol VDS VGS ID IDM IAR EAR PD PD TJ, Tstg Limit 60 "20 75 53 Unit V A 180 60 180 142b 3.75c –55 to 175 W _C mJ Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)c Junction-to-Ambient Free Air (TO-220AB) Junction-to-Case Notes: a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1” square PCB (FR-4 material). Document Number: 70807 S-59182—Rev. B, 07-Sep-98 www.vishay.com S FaxBack 408-970-5600 RthJC RthJA 62.5 1.05 Symbol Limit 40 Unit _C/W 2-1 www.DataSheet4U DataSheet4U.com www.DataSheet4U.com SUP/SUB75N06-12L Vishay Siliconix MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 250 mA VD...