Document
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SUP/SUB75N05-06
Vishay Siliconix
N-Channel 50-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
50
rDS(on) (W)
0.006
ID (A)
75
TO-220AB
D
TO-263
G DRAIN connected to TAB G G D S Top View SUP75N05-06 SUB75N05-06 N-Channel MOSFET D S
Top View S
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Parameter Symbol
VGS TC = 25_C TC = 125_C ID IDM IAR
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Limit
"20 75a 70 240 75 280 250c PD TJ, Tstg 3.7 –55 to 175 W _C mJ A
Unit
V
Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Power Dissipation Operating Junction and Storage Temperature Range Energyb L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d
EAR
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount Junction-to-Ambient Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 70292 S-05110—Rev. E, 10-Dec-01 www.vishay.com (TO-263)d RthJA RthJC
Symbol
Limit
40 62.5 0.6
Unit
Free Air (TO-220AB)
_C/W
2-1
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SUP/SUB75N05-06
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 50 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 50 V, VGS = 0 V, TJ = 125_C VDS = 50 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 75 A Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 75 A, TJ = 125_C VGS = 10 V, ID = 75 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 60 A 30 120 0.005 0.006 0.010 0.012 S W 50 V 2.0 4.0 "100 1 50 150 A mA nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Qg VGS = 0 V, VDS = 25 V, f = 1 MHz 4500 1100 360 85 VDS = 25 V, VGS = 10 V, ID = 75 A 25 25 20 20 50 20 40 100 100 40 ns 120 nC pF
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Qgd td(on) tr td(off) tf VDD = 25 V, RL = 0.33 W ID ^ 75 A, VGEN = 10 V, RG = 2.5 W IS ISM VSD trr IRM(REC) Qrr IF = 75 A, di/dt = 100 A/ms IF = 75 A , VGS = 0 V
Qgs
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge 75 A 200 1.0 65 5 0.16 1.4 120 8 0.48 V ns A mC
Notes a. Pulse test: pulse width v 300 msec, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.
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2-2
Document Number: 70292 S-05110—Rev. E, 10-Dec-01
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SUP/SUB75N05-06
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250 VGS = 8, 9, 10 V 200 150 I D – Drain Current (A) 150 6V I D – Drain Current (A) 7V 200
Transfer Characteristics
100
100
50
50
5V 4V
TC = 125_C 25_C –55_C 4 5 6 7
0 0 2 4 6 8 10
0 0 1 2 3
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
Transconductance
150 TC = –55_C 125 g fs – Transconductance (S) 25_C 100 r DS(on) – On-Resistance ( Ω ) 0.006 0.008
On-Resistance vs. Drain Current
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125_C 0.004 0.002
VGS = 10 V
75
VGS = 20 V
50
25
0 0 20 40 ID – Drain Current (A) 60 80
0.000 0 20 40 60 80 100 120
ID – Drain Current (A)
Capacitance
8000 20
Gate Charge
V GS – Gate-to-Source Voltage (V)
16
C – Capacitance (pF)
6000 Ciss 4000
VDS = 25 V ID = 75 A
12
8
2000 Crss 0 0 10 20
Coss
4
0 30 40 50 0 25 50 75 100 125 150 175
VDS – Drain-to-Source Voltage (V)
Qg – Total Gate Charge (nC)
Document Number: 70292 S-05110—Rev. E, 10-Dec-01
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2-3
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SUP/SUB75N05-06
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5 VGS = 10 V ID = 75 A r DS(on) – On-Resistance ( Ω ) (Normalized) 2.0 I S – Source Current (A) TJ = 150_C TJ = 25_C 10 100
Source-Drain Diode Forward Voltage
1.5
1.0
0.5
0.0 –50
1 –25 0 25 50 75 100 125 150 175 0.3 0.6 0.9 1.2 1.5 TJ – Junction Temperature (_C) VSD – Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche and Drain Current vs. Case Temperature
100 500
Safe Operating Area
80 I D – Drain Current (A)
I D – Drain Current (A)
60
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100 Limited by rDS(on) 10 TC = 25_C Single Pulse
100 ms
40
1 ms
20
10 ms 100 ms dc
0 0 25 50 75 100 125 150 175 TC – Case Temperature (_C)
1 0.1 1 10 VDS – Drain-to-Source Voltage (V)
100
Normalized Thermal Transient Impedance, Junction-to-Case
2 1 Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 .