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SUB75N03-04 Dataheets PDF



Part Number SUB75N03-04
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description N-Channel MOSFET
Datasheet SUB75N03-04 DatasheetSUB75N03-04 Datasheet (PDF)

www.DataSheet4U.com SUP/SUB75N03-04 Vishay Siliconix N-Channel 30-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) 0.004 ID (A) 75a TO-220AB TO-263 D G DRAIN connected to TAB DRAIN connected to TAB G D S G D S Top View SUP75N03-04 Top View SUB75N03-04 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol VGS TC = 25_C TC = 125_C ID IDM IS IAR L = 0.1 mH L = 0.05 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d EAS EAR PD .

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www.DataSheet4U.com SUP/SUB75N03-04 Vishay Siliconix N-Channel 30-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) 0.004 ID (A) 75a TO-220AB TO-263 D G DRAIN connected to TAB DRAIN connected to TAB G D S G D S Top View SUP75N03-04 Top View SUB75N03-04 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol VGS TC = 25_C TC = 125_C ID IDM IS IAR L = 0.1 mH L = 0.05 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d EAS EAR PD TJ, Tstg TO-220AB TL Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Avalanche Energy Repetitive Avalanche Energyb Maximum Power Dissipation "20 75a 75a 250 75 75 280 140 187c 3.7 www.DataSheet4U.com Limit Unit V A mJ W Operating Junction and Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) –55 to 175 300 _C THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)d Junction-to-Ambient Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70745 S-04137—Rev. E, 18-Jun-01 www.vishay.com Free Air (TO-220AB) RthJA RthJC Symbol Limit 40 62.5 0.6 Unit _C/W 2-1 www.DataSheet4U DataSheet4U.com www.DataSheet4U.com SUP/SUB75N03-04 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 125_C VDS = 30 V, VGS = 0 V, TJ = 175_C On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 75 A Drain-Source On-State Resistanceb VGS = 4.5 V, ID = 75 A rDS(on) VGS = 10 V, ID = 25 A, TJ = 125_C VGS = 10 V, ID = 25 A, TJ = 175_C Forward Transconductanceb gfs VDS = 15 V, ID = 25 A 30 120 0.0034 0.005 0.004 0.006 0.006 0.008 S W 30 V 1 3 "500 1 50 200 A mA nA Symbol Test Condition Min Typa Max Unit Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Ciss Coss Crss Qg VGS = 0 V, VDS = 25 V, f = 1 MHz 10742 1811 775 200 40 40 20 VDD = 30 V, RL = 0.6 W ID ^ 50 A, VGEN = 10 V, RG = 2.5 W 40 190 95 ns 40 250 nC pF www.DataSheet4U.com Qgs VDS = 30 V, VGS = 10 V, ID = 75 A Qgd td(on) tr td(off) tf Source-Drain Diode Ratings and Characteristics Diode Forward Voltageb Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge VSD trr IRM(rec) Qrr IF = 50 A, di/dt = 100 A/ms IF = 75 A, VGS = 0 V 70 2.8 0.1 1.3 120 6 0.36 V ns A mC Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com 2-2 Document Number: 70745 S-04137—Rev. E, 18-Jun-01 www.DataSheet4U DataSheet4U.com www.DataSheet4U.com SUP/SUB75N03-04 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 VGS = 10, 9, 8, 7, 6, 5 V 200 I D – Drain Current (A) 4V 150 150 I D – Drain Current (A) 200 Transfer Characteristics 100 100 50 TC = 125_C 25_C –55_C 50 3V 0 0 2 4 6 8 10 0 0 1 2 3 4 5 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) Transconductance 175 150 TC = –55_C g fs – Transconductance (S) 125 100 75 50 25 0 0 20 40 60 80 100 0.008 On-Resistance vs. Drain Current 25_C r DS(on) – On-Resistance ( Ω ) www.DataSheet4U.com 0.004 VGS = 10 V 0.002 125_C 0.006 VGS = 4.5 V 0.000 0 20 40 60 80 100 120 VGS – Gate-to-Source Voltage (V) ID – Drain Current (A) Capacitance 14000 12000 C – Capacitance (pF) 10000 8000 6000 4000 Coss 2000 0 0 6 12 18 24 30 Crss Ciss 20 Gate Charge V GS – Gate-to-Source Voltage (V) 16 VDS = 30 V ID = 75 A 12 8 4 0 0 100 200 300 400 VDS – Drain-to-Source Voltage (V) Qg – Total Gate Charge (nC) Document Number: 70745 S-04137—Rev. E, 18-Jun-01 www.vishay.com 2-3 www.DataSheet4U DataSheet4U.com www.DataSheet4U.com SUP/SUB75N03-04 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.5 VGS = 10 V ID = 30 A r DS(on) – On-Resistance ( Ω ) (Normalized) 2.0 I S – Source Current (A) TJ = 150_C TJ = 25_C 10 100 Source-Drain Diode Forward Voltage 1.5 1.0 0.5 0.0 –50 1 –25 0 25 50 75 100 125 150 175 0.3 0.6 0.9 1.2 1.5 TJ – Junction Temperature (_C) VSD – Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 100 Safe Operating Area 80 I D – Drain Current (A) 60 I D – Drain Current (A) www.DataSheet4U.com 100 10 TC = 25_C Single Pulse Limited by rDS(on) 100 ms 1 ms 40 10 ms 100 ms dc 20 0 0 25 50 75 100 125 150 175 TC – Case Tem.


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